A refined plan-view specimen preparation technique for high-quality electron microscopy studies of epitaxially grown atomically thin 2D layers

IF 2.1 3区 工程技术 Q2 MICROSCOPY
A.S. Prikhodko , E. Zallo , R. Calarco , N.I. Borgardt
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引用次数: 0

Abstract

The structural studies of two-dimensional (2D) van der Waals heterostructures and understanding of their relationship with the orientation of crystalline substrates using transmission electron microscopy (TEM) presents a challenge in developing an easy-to-use plan-view specimen preparation technique. In this report, we introduce a simple approach for high-quality plan-view specimen preparation utilizing a dual beam system comprising focused ion beam and scanning electron microscopy.
To protect the atomically thin 2D heterostructure during the preparation process, we employ an epoxy layer. This layer serves as a protective barrier and enables the creation of a TEM specimen comprising a thin substrate fragment with an overgrown 2D structure covered by a thin, electron-transparent epoxy layer. The coexistence of both 2D layers and substrate is essential for investigating the relative crystallographic orientations between the grown 2D structures and the substrates. The thickness of the specimen is monitored using low-voltage scanning electron microscopy.
We apply this technique to prepare plan-view specimens of 2D germanium-antimony-telluride (GST) on Si and hexagonal boron nitride (h-BN)/epitaxial graphene (EG) heterostructures grown on 6H-SiC substrates. The grain-like atomic structure observed in the 2.2 nm thick GST layer on Si substrate provides evidence of the mosaicity of GST during the early stages of epitaxial growth. H-BN/EG on 6H-SiC structural studies indicate a rotation of h-BN/EG around the 6H-SiC[0001] axis by an angle of 30°. The observed BN particles with sizes in the nanometer range on top of the sample have the wurtzite lattice type and random orientation.
The developed specimen preparation technique offers a powerful tool for TEM studies of atomically thin layers on crystals. Its simplicity and ability to provide valuable insights into the in-plane relationships between 2D structures and crystalline substrates make it a promising complement to grazing incident X-ray diffraction.
用于对外延生长的原子级二维薄层进行高质量电子显微镜研究的精细平面视图试样制备技术
利用透射电子显微镜(TEM)对二维(2D)范德华异质结构进行结构研究,并了解它们与晶体基底取向的关系,这对开发一种易于使用的平面视图试样制备技术提出了挑战。在本报告中,我们介绍了一种利用双光束系统(包括聚焦离子束和扫描电子显微镜)制备高质量平面视图试样的简单方法。为了在制备过程中保护原子级较薄的二维异质结构,我们采用了环氧树脂层,该层可作为保护屏障,并可制作 TEM 试样,试样由薄基片和生长过的二维结构组成,基片上覆盖着一层薄的电子透明环氧树脂层。二维层和基底的共存对于研究生长的二维结构和基底之间的相对晶体学取向至关重要。我们采用这种技术制备了硅基二维锗锑碲化物 (GST) 和 6H-SiC 基底上生长的六方氮化硼 (h-BN) / 外延石墨烯 (EG) 异质结构的平面视图试样。在硅衬底上 2.2 nm 厚的 GST 层中观察到的晶粒状原子结构证明了 GST 在外延生长早期阶段的镶嵌性。6H-SiC 上的 H-BN/EG 结构研究表明,h-BN/EG 围绕 6H-SiC[0001] 轴旋转了 30°。在样品顶部观察到的尺寸在纳米范围内的 BN 粒子具有渥兹晶格类型和随机取向。所开发的试样制备技术为晶体上原子薄层的 TEM 研究提供了强有力的工具,其简便性和对二维结构与晶体基底之间的面内关系提供有价值见解的能力,使其成为掠入射 X 射线衍射的有力补充。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Ultramicroscopy
Ultramicroscopy 工程技术-显微镜技术
CiteScore
4.60
自引率
13.60%
发文量
117
审稿时长
5.3 months
期刊介绍: Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.
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