A. S. Jaroshevich, V. A. Tkachenko, Z. D. Kvon, N. S. Kuzmin, O. A. Tkachenko, D. G. Baksheev, I. V. Marchishin, A. K. Bakarov, E. E. Rodyakina, V. A. Antonov, V. P. Popov, A. V. Latyshev
{"title":"Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor","authors":"A. S. Jaroshevich, V. A. Tkachenko, Z. D. Kvon, N. S. Kuzmin, O. A. Tkachenko, D. G. Baksheev, I. V. Marchishin, A. K. Bakarov, E. E. Rodyakina, V. A. Antonov, V. P. Popov, A. V. Latyshev","doi":"10.1134/S1062873824707773","DOIUrl":null,"url":null,"abstract":"<p>Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel <i>p</i>-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.</p>","PeriodicalId":504,"journal":{"name":"Bulletin of the Russian Academy of Sciences: Physics","volume":"88 9","pages":"1505 - 1512"},"PeriodicalIF":0.4800,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of the Russian Academy of Sciences: Physics","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1062873824707773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Physics and Astronomy","Score":null,"Total":0}
引用次数: 0
Abstract
Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.
期刊介绍:
Bulletin of the Russian Academy of Sciences: Physics is an international peer reviewed journal published with the participation of the Russian Academy of Sciences. It presents full-text articles (regular, letters to the editor, reviews) with the most recent results in miscellaneous fields of physics and astronomy: nuclear physics, cosmic rays, condensed matter physics, plasma physics, optics and photonics, nanotechnologies, solar and astrophysics, physical applications in material sciences, life sciences, etc. Bulletin of the Russian Academy of Sciences: Physics focuses on the most relevant multidisciplinary topics in natural sciences, both fundamental and applied. Manuscripts can be submitted in Russian and English languages and are subject to peer review. Accepted articles are usually combined in thematic issues on certain topics according to the journal editorial policy. Authors featured in the journal represent renowned scientific laboratories and institutes from different countries, including large international collaborations. There are globally recognized researchers among the authors: Nobel laureates and recipients of other awards, and members of national academies of sciences and international scientific societies.