Thermoelectric properties of MoS2-MoTe2 and MoS2-MoSe2lateral hetero-structures: The effects of external magnetic, transverse electric fields and nanoribbon width

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-02 DOI:10.1016/j.physe.2024.116119

Mona Abdi , Bandar Astinchap , Farhad Khoeini

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Abstract

Extensive research is underway to improve the thermoelectric properties of materials by enhancing the figure of merit (ZT). In this study, we are investigating the thermoelectric properties of MoS₂/MoTe₂ and MoS₂/MoSe₂ lateral heterostructures (LH-S) under the influence of external magnetic fields (EMF) and transverse electric fields (TEF). We employ the non-equilibrium Green's function (N-EGF) and tight-binding (TB) methods for our analysis. The results obtained indicate that the ZT for MoS₂-MoTe₂ and MoS₂-MoSe₂ LH-S enhanced with an increase in the TEF. The ZT of MoS₂-MoSe₂ LH-S increases near room temperature, while the ZT of MoS₂-MoTe₂ LH-S increases with an increase in EMF across the entire temperature range. Additionally, the ZT for MoS₂-MoSe₂ LH-S increases with an increase in the nanoribbon width, whereas for MoS₂-MoTe₂ LH-S, it decreases. The results reveal that the semiconductor type of MoS₂-MoSe₂ and MoS₂-MoTe₂ LH-S changes from n-type to p-type when subjected to EMF and transverse TEF. The examination of the temperature dependence of ZT in the presence of TEF and EMF for MoS₂-MoTe₂ and MoS₂-MoSe₂ LH-S indicates that these structures are highly promising candidates for use in electrical devices.

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MoS2-MoTe2 和 MoS2-MoSe2 侧异质结构的热电性能：外磁场、横向电场和纳米带宽度的影响

目前正在进行广泛的研究，以通过提高材料的功勋值（ZT）来改善其热电性能。在本研究中，我们研究了 MoS2/MoTe2 和 MoS2/MoSe2 横向异质结构 (LH-S) 在外加磁场 (EMF) 和横向电场 (TEF) 影响下的热电性能。我们采用非平衡格林函数（N-EGF）和紧密结合（TB）方法进行分析。结果表明，MoS2-MoTe2 和 MoS2-MoSe2 LH-S 的 ZT 随 TEF 的增加而增强。MoS2-MoSe2 LH-S 的 ZT 在室温附近增加，而 MoS2-MoTe2 LH-S 的 ZT 在整个温度范围内随着电磁场的增加而增加。此外，MoS2-MoSe2 LH-S 的 ZT 随纳米带宽度的增加而增加，而 MoS2-MoTe2 LH-S 的 ZT 则随纳米带宽度的增加而减小。结果表明，当受到电磁场和横向 TEF 作用时，MoS2-MoSe2 和 MoS2-MoTe2 LH-S 的半导体类型会从 n 型变为 p 型。对 MoS2-MoTe2 和 MoS2-MoSe2 LH-S 在 TEF 和 EMF 作用下的 ZT 温度依赖性的研究表明，这些结构非常有希望用于电子器件。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures