Influence of Li Ions on Memristor Properties of Capacitor Structures Based on Nanocomposites (Co40Fe40B20)x(LiNbO3)100–x

IF 1.1 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Pub Date : 2024-09-27 DOI:10.1134/S1063784224070442

A. V. Sitnikov, Yu. E. Kalinin, I. V. Babkina, A. E. Nikonov, M. N. Kopytin, L. I. Yanchenko, A. R. Shakurov

{"title":"Influence of Li Ions on Memristor Properties of Capacitor Structures Based on Nanocomposites (Co40Fe40B20)x(LiNbO3)100–x","authors":"A. V. Sitnikov, Yu. E. Kalinin, I. V. Babkina, A. E. Nikonov, M. N. Kopytin, L. I. Yanchenko, A. R. Shakurov","doi":"10.1134/S1063784224070442","DOIUrl":null,"url":null,"abstract":"The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co50Fe50)x(LiNbO3)100–x/s-LiNbO3/Cu/sitall, Cu/(Co50Fe50)x(LiNbO3)100–x/d-LiNbO3/Cu/sitall and Cu/(Co40Fe40B20)x(SiO2)100–x/d LiNbO3/Cu/sitall at x < 13 was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a “reversible” type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co40Fe40B20)x(LiNbO3)100–x/s-LiNbO3/Cu/sitall, Cr/Cu/Cr/(Co40Fe40B20)x(LiNbO3)100–x/s-LiNbO3/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co50Fe50)x(LiNbO3)100–x/s-LiNbO3/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2133 - 2140"},"PeriodicalIF":1.1000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063784224070442","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co₅₀Fe₅₀)_x(LiNbO₃)_100–x/s-LiNbO₃/Cu/sitall, Cu/(Co₅₀Fe₅₀)_x(LiNbO₃)_100–x/d-LiNbO₃/Cu/sitall and Cu/(Co₄₀Fe₄₀B₂₀)_x(SiO₂)_100–x/d LiNbO₃/Cu/sitall at x < 13 was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a “reversible” type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co₄₀Fe₄₀B₂₀)_x(LiNbO₃)_100–x/s-LiNbO₃/Cu/sitall, Cr/Cu/Cr/(Co₄₀Fe₄₀B₂₀)_x(LiNbO₃)_100–x/s-LiNbO₃/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co₅₀Fe₅₀)_x(LiNbO₃)_100–x/s-LiNbO₃/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.

Abstract Image

查看原文本刊更多论文

锂离子对基于纳米复合材料 (Co40Fe40B20)x(LiNbO3)100-x 的电容器结构的晶闸管特性的影响

论文揭示了 Li、B 和金属触点的组成对记忆晶体结构 M/NC/D/M 中电阻开关过程的影响。在 Cu/(Co50Fe50)x(LiNbO3)100-x/s-LiNbO3/Cu/sitall、Cu/(Co50Fe50)x(LiNbO3)100-x/d-LiNbO3/Cu/sitall 和 Cu/(Co40Fe40B20)x(SiO2)100-x/d-LiNbO3/Cu/sitall 结构中，在 x <；13 时检测到了由于锂离子电迁移而产生的残余电压（高达 16 mV），这导致了 "可逆 "型 VAC 滞后和诱导电阻态时间依赖性的不稳定性。在含有 B 的 Cu/(Co40Fe40B20)x(LiNbO3)100-x/s-LiNbO3/Cu/sitall 和 Cr/Cu/Cr/(Co40Fe40B20)x(LiNbO3)100-x/s-LiNbO3/Cr/Cu/Cr/sitall 结构中，由于与渗入的锂原子形成化合物 B，残压降低。当限制锂离子的电迁移时，电阻开关的主要机制是介质氧化层中氧空位的电迁移过程。Cr/Cu/Cr/(Co50Fe50)x(LiNbO3)100-x/s-LiNbO3/Cr/Cu/Cr/sitall 结构中由于引入了不溶解锂的 Cr 缓冲层而抑制了残余电压，导致这些结构中没有双极电阻开关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Technical Physics 物理-物理：应用

CiteScore

1.30

自引率

14.30%

发文量

139

审稿时长

3-6 weeks

期刊介绍： Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.