V. M. Kalygina, O. S. Kiseleva, V. V. Kopyev, B. O. Kushnarev, V. L. Oleinik, Y. S. Petrova, A. V. Tsymbalov
{"title":"Effect of Thermal Annealing on Properties Ga2O3/GaAs:Cr Heterostructures","authors":"V. M. Kalygina, O. S. Kiseleva, V. V. Kopyev, B. O. Kushnarev, V. L. Oleinik, Y. S. Petrova, A. V. Tsymbalov","doi":"10.1134/S106378422406015X","DOIUrl":null,"url":null,"abstract":"<p>Data on the sensitivity of Ga<sub>2</sub>O<sub>3</sub>/GaAs:Cr heterostructures are presented to long-wave and UV (λ = 254 nm) radiation. The samples were obtained by RF magnetron sputtering of a gallium oxide film on non-heated GaAs:Cr substrates. Gallium arsenide plates with a Ga<sub>2</sub>O<sub>3</sub> film were divided into two parts: one half was not annealed, and the other was annealed in argon at 500°C for 30 min. Regardless of the presence or absence of heat treatment, the studied structures exhibit a photovoltaic effect and are able to operate in an autonomous mode. It is shown that a noticeable sensitivity to long-wave radiation appears in the samples only after thermal annealing of gallium oxide films. The response and recovery times of such UV radiation detectors do not exceed 1 second.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1584 - 1589"},"PeriodicalIF":1.1000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S106378422406015X","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Data on the sensitivity of Ga2O3/GaAs:Cr heterostructures are presented to long-wave and UV (λ = 254 nm) radiation. The samples were obtained by RF magnetron sputtering of a gallium oxide film on non-heated GaAs:Cr substrates. Gallium arsenide plates with a Ga2O3 film were divided into two parts: one half was not annealed, and the other was annealed in argon at 500°C for 30 min. Regardless of the presence or absence of heat treatment, the studied structures exhibit a photovoltaic effect and are able to operate in an autonomous mode. It is shown that a noticeable sensitivity to long-wave radiation appears in the samples only after thermal annealing of gallium oxide films. The response and recovery times of such UV radiation detectors do not exceed 1 second.
期刊介绍：
Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.
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