Large ferroelectricity in Hf0.85Ce0.15O2−δ polycrystalline thin films via lattice expansion†

IF 6.1 1区化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR

Inorganic Chemistry Frontiers Pub Date : 2024-09-23 DOI:10.1039/D4QI01558D

Hangren Li, Jie Tu, Guoqiang Xi, Xiuqiao Liu, Xudong Liu, Siyuan Du, Dongfei Lu, Da Zu, Yuxuan Zhang, Qingxiao Wang, Dongxing Zheng, Xixiang Zhang, Jianjun Tian and Linxing Zhang

{"title":"Large ferroelectricity in Hf0.85Ce0.15O2−δ polycrystalline thin films via lattice expansion†","authors":"Hangren Li, Jie Tu, Guoqiang Xi, Xiuqiao Liu, Xudong Liu, Siyuan Du, Dongfei Lu, Da Zu, Yuxuan Zhang, Qingxiao Wang, Dongxing Zheng, Xixiang Zhang, Jianjun Tian and Linxing Zhang","doi":"10.1039/D4QI01558D","DOIUrl":null,"url":null,"abstract":"The discovery of ferroelectricity in HfO2-based thin films has strongly energized the field of integrated semiconductor devices. To expand the physical applications of HfO2-based thin films, it is essential to urgently enhance their ferroelectric polarization. In this work, we have synthesized Hf0.85Ce0.15O2−δ thin films with a large remanent polarization of 2Pr ∼ 69 μC cm−2, which is the maximum of all HfO2-based polycrystal thin films. The strong increase of the remanent polarization is caused by the significant lattice expansion triggered by the increase of Ce3+ content, which is controlled by temperature. Due to the increase of the lattice constant in the c-axis, the unit-cell volume expands from 132.16 Å3 to 137.66 Å3, inducing an increase in the distortion of ions along the direction of the polarization axis and leading to an increase in polarization. This finding is of significant practical importance for promoting HfO2-based materials and their development in physical fields.","PeriodicalId":79,"journal":{"name":"Inorganic Chemistry Frontiers","volume":" 21","pages":" 7535-7544"},"PeriodicalIF":6.1000,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Chemistry Frontiers","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/qi/d4qi01558d","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}

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Abstract

The discovery of ferroelectricity in HfO₂-based thin films has strongly energized the field of integrated semiconductor devices. To expand the physical applications of HfO₂-based thin films, it is essential to urgently enhance their ferroelectric polarization. In this work, we have synthesized Hf_0.85Ce_0.15O_2−δ thin films with a large remanent polarization of 2P_r ∼ 69 μC cm⁻², which is the maximum of all HfO₂-based polycrystal thin films. The strong increase of the remanent polarization is caused by the significant lattice expansion triggered by the increase of Ce³⁺ content, which is controlled by temperature. Due to the increase of the lattice constant in the c-axis, the unit-cell volume expands from 132.16 Å³ to 137.66 Å³, inducing an increase in the distortion of ions along the direction of the polarization axis and leading to an increase in polarization. This finding is of significant practical importance for promoting HfO₂-based materials and their development in physical fields.

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通过晶格膨胀实现 Hf0.85Ce0.15O2-δ 多晶薄膜的大铁电性

二氧化铪薄膜铁电性的发现为集成半导体器件领域注入了强劲的活力。为了扩大 HfO2 基薄膜的物理应用，迫切需要增强其铁电极化。在这项工作中，我们合成了 Hf0.85Ce0.15O2-δ 薄膜，其剩磁极化达到 2Pr ∼ 69 μC cm-2，是所有 HfO2 基多晶薄膜中最大的。Ce3+含量的增加会导致晶格膨胀，而晶格膨胀又受温度控制，这就造成了剩电位极化的强烈增加。由于 c 轴晶格常数的增加，单位晶胞体积从 132.16 Å3 扩大到 137.66 Å3，从而引起离子沿极化轴方向的畸变增加，导致极化增强。这一发现对于促进基于 HfO2 的材料及其在物理领域的发展具有重要的现实意义。

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