Computational Study on SnS2 as Anode Material for Magnesium Ion Battery

IF 2.3 3区 化学 Q3 CHEMISTRY, PHYSICAL
Jianmeng Dang, Yanze Li
{"title":"Computational Study on SnS2 as Anode Material for Magnesium Ion Battery","authors":"Jianmeng Dang,&nbsp;Yanze Li","doi":"10.1002/qua.27478","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>The strain can regulate the electronic properties of transition metal sulfides and enhance their application in ion battery electrode materials. In this article, the potential of single-layer SnS<sub>2</sub> as anode material for magnesium ion batteries under shear strain and torsional strain was studied by first-principles calculation. The calculation of adsorption energy shows that the strain does not have a great influence on the structural stability. The band gap of SnS<sub>2</sub> calculated by HSE06 is 2.210 eV. When Mg is on the surface of SnS<sub>2</sub>, the band gap of SnS<sub>2</sub> drops to 0.113 eV, which shows quasi-metallic properties. Both strains can regulate the band gap value of SnS<sub>2</sub>. The diffusion energy barrier of SnS<sub>2</sub> after strain is significantly lower than that without strain. After torsion strain, the diffusion barrier of Mg ions on SnS<sub>2</sub> is 0.11 eV. The research results provide a theoretical basis for the design of magnesium ion batteries.</p>\n </div>","PeriodicalId":182,"journal":{"name":"International Journal of Quantum Chemistry","volume":"124 19","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Quantum Chemistry","FirstCategoryId":"92","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/qua.27478","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

The strain can regulate the electronic properties of transition metal sulfides and enhance their application in ion battery electrode materials. In this article, the potential of single-layer SnS2 as anode material for magnesium ion batteries under shear strain and torsional strain was studied by first-principles calculation. The calculation of adsorption energy shows that the strain does not have a great influence on the structural stability. The band gap of SnS2 calculated by HSE06 is 2.210 eV. When Mg is on the surface of SnS2, the band gap of SnS2 drops to 0.113 eV, which shows quasi-metallic properties. Both strains can regulate the band gap value of SnS2. The diffusion energy barrier of SnS2 after strain is significantly lower than that without strain. After torsion strain, the diffusion barrier of Mg ions on SnS2 is 0.11 eV. The research results provide a theoretical basis for the design of magnesium ion batteries.

关于 SnS2 作为镁离子电池负极材料的计算研究
应变可以调节过渡金属硫化物的电子特性,提高其在离子电池电极材料中的应用。本文通过第一性原理计算研究了单层SnS2在剪切应变和扭转应变下作为镁离子电池负极材料的潜力。吸附能的计算表明,应变对结构稳定性的影响不大。用 HSE06 计算出的 SnS2 带隙为 2.210 eV。当 Mg 位于 SnS2 表面时,SnS2 的带隙降至 0.113 eV,显示出准金属特性。两种应变都能调节 SnS2 的带隙值。应变后 SnS2 的扩散能垒明显低于无应变时的扩散能垒。扭转应变后,镁离子在 SnS2 上的扩散能垒为 0.11 eV。研究结果为镁离子电池的设计提供了理论依据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
International Journal of Quantum Chemistry
International Journal of Quantum Chemistry 化学-数学跨学科应用
CiteScore
4.70
自引率
4.50%
发文量
185
审稿时长
2 months
期刊介绍: Since its first formulation quantum chemistry has provided the conceptual and terminological framework necessary to understand atoms, molecules and the condensed matter. Over the past decades synergistic advances in the methodological developments, software and hardware have transformed quantum chemistry in a truly interdisciplinary science that has expanded beyond its traditional core of molecular sciences to fields as diverse as chemistry and catalysis, biophysics, nanotechnology and material science.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信