Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation

IF 2.7 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Applied Physics Pub Date : 2024-09-13 DOI:10.1063/5.0226406

Vadim Emtsev, Nikolay Abrosimov, Vitalii Kozlovski, Stanislav Lastovskii, Gagik Oganesyan, Dmitrii Poloskin

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Abstract

Electrical properties of defects produced in strongly bismuth-doped silicon by 15 MeV protons are investigated in detail. Electrical measurements on irradiated samples by means of the van der Pauw technique are conducted over a wide temperature range of 20–300 K to furnish information on radiation-produced complexes. It is shown that the properties of the dominant bismuth-related defects are the same as earlier found in the electron-irradiated material. These complexes are tentatively identified as bismuth–vacancy pairs being deep donors. Their atomic configuration appears to be radically different from what is known about similar vacancy-related defects with other group-V impurities. These bismuth-related pairs are stable up to T ≈ 300 °C. Some special features of defect formation and annealing processes of radiation defects in bismuth-doped silicon subjected to electron and proton irradiation are discussed. This information may be of advantage in modeling impurity-related complexes containing oversized impurity atoms in silicon.

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用质子辐照的 n 型硅中与铋有关的缺陷：与电子辐照下形成的类似缺陷的比较

详细研究了 15 MeV 质子在强掺铋硅中产生的缺陷的电特性。在 20-300 K 的宽温度范围内，通过范德保技术对辐照样品进行了电学测量，以提供有关辐照产生的复合物的信息。结果表明，主要的铋相关缺陷的性质与之前在电子辐照材料中发现的相同。这些络合物被初步确定为铋空位对的深度供体。它们的原子构型似乎与其他 V 族杂质的类似空位相关缺陷完全不同。这些双铋空位对在温度≈300 ℃时是稳定的。本文讨论了掺铋硅在电子和质子辐照下的缺陷形成和辐射缺陷退火过程的一些特点。这些信息可能有助于模拟硅中含有超大杂质原子的杂质相关复合物。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Applied Physics 物理-物理：应用

CiteScore

5.40

自引率

9.40%

发文量

1534

审稿时长

2.3 months

期刊介绍： The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces