Giant electro-optic response in transparent rhombohedral ferroelectric Sm-PIN-PMN-PT crystal based on domain engineering

IF 2.7 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Applied Physics Pub Date : 2024-09-19 DOI:10.1063/5.0230598

Yiyang Wen, Hongda Ren, Xiaona Du, Yang Zhang

{"title":"Giant electro-optic response in transparent rhombohedral ferroelectric Sm-PIN-PMN-PT crystal based on domain engineering","authors":"Yiyang Wen, Hongda Ren, Xiaona Du, Yang Zhang","doi":"10.1063/5.0230598","DOIUrl":null,"url":null,"abstract":"The relaxor ferroelectric crystal Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), located near the morphotropic phase boundary (MPB), exhibits exceptionally high piezoelectric and electro-optic (EO) responses. Nevertheless, lower optical transparency and phase transition temperature of PMN-PT limit its optical applications. The ternary system Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) holds promise in addressing these challenges with a higher Curie temperature. Additionally, specific ferroelectric domain polarization techniques can eliminate domain scattering, substantially enhancing the transparency of the crystal. In this study, we explore the optical properties of Sm-doped PIN-PMN-PT. We achieve a 2R domain-engineered state by polarizing along the (110) direction of the crystal. The high transparency allows us to extract an effective EO coefficient of up to 431.5 pm/V from the Sm-PIN-PMN-PT crystal at the telecommunications wavelength. Second-harmonic generation (SHG) probing verified the domain-engineered state in Sm-PIN-PMN-PT. The temperature-dependent SHG reveals the ferroelectric phase transition process, laying the groundwork for studying the stability of the EO response. The Sm-PIN-PMN-PT crystal exhibits an exceptionally high EO coefficient, which is crucial for the development of enhanced EO devices with high integration and low driving voltages.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"18 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0230598","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

The relaxor ferroelectric crystal Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), located near the morphotropic phase boundary (MPB), exhibits exceptionally high piezoelectric and electro-optic (EO) responses. Nevertheless, lower optical transparency and phase transition temperature of PMN-PT limit its optical applications. The ternary system Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) holds promise in addressing these challenges with a higher Curie temperature. Additionally, specific ferroelectric domain polarization techniques can eliminate domain scattering, substantially enhancing the transparency of the crystal. In this study, we explore the optical properties of Sm-doped PIN-PMN-PT. We achieve a 2R domain-engineered state by polarizing along the (110) direction of the crystal. The high transparency allows us to extract an effective EO coefficient of up to 431.5 pm/V from the Sm-PIN-PMN-PT crystal at the telecommunications wavelength. Second-harmonic generation (SHG) probing verified the domain-engineered state in Sm-PIN-PMN-PT. The temperature-dependent SHG reveals the ferroelectric phase transition process, laying the groundwork for studying the stability of the EO response. The Sm-PIN-PMN-PT crystal exhibits an exceptionally high EO coefficient, which is crucial for the development of enhanced EO devices with high integration and low driving voltages.

查看原文本刊更多论文

基于畴工程的透明斜方铁电体 Sm-PIN-PMN-PT 晶体的巨大电光响应

位于各向形态相边界（MPB）附近的弛豫铁电晶体 Pb（Mg1/3Nb2/3）O3-xPbTiO3（PMN-PT）具有极高的压电和电光（EO）响应。然而，PMN-PT 较低的光学透明度和相变温度限制了其光学应用。三元系统 Pb（In1/2Nb1/2）O3-Pb（Mg1/3Nb2/3）O3-PbTiO3（PIN-PMN-PT）的居里温度较高，有望解决这些难题。此外，特定的铁电畴极化技术可以消除畴散射，大大提高晶体的透明度。在本研究中，我们探索了掺杂 Sm 的 PIN-PMN-PT 的光学特性。我们通过沿晶体的（110）方向极化，实现了 2R 畴工程状态。高透明度使我们能够在电信波长下从 Sm-PIN-PMN-PT 晶体中提取出高达 431.5 pm/V 的有效 EO 系数。二次谐波发生（SHG）探测验证了 Sm-PIN-PMN-PT 中的畴工程状态。随温度变化的 SHG 揭示了铁电相变过程，为研究 EO 响应的稳定性奠定了基础。Sm-PIN-PMN-PT 晶体具有极高的环氧乙烷系数，这对于开发高集成度和低驱动电压的增强型环氧乙烷器件至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Applied Physics 物理-物理：应用

CiteScore

5.40

自引率

9.40%

发文量

1534

审稿时长

2.3 months

期刊介绍： The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces