Jie Zhou, Daniel Vincent, Sudip Acharya, Solomon Ojo, Alireza Abrand, Yang Liu, Jiarui Gong, Dong Liu, Samuel Haessly, Jianping Shen, Shining Xu, Yiran Li, Yi Lu, Hryhorii Stanchu, Luke Mawst, Bruce Claflin, Parsian K. Mohseni, Zhenqiang Ma, Shui-Qing Yu
{"title":"Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K","authors":"Jie Zhou, Daniel Vincent, Sudip Acharya, Solomon Ojo, Alireza Abrand, Yang Liu, Jiarui Gong, Dong Liu, Samuel Haessly, Jianping Shen, Shining Xu, Yiran Li, Yi Lu, Hryhorii Stanchu, Luke Mawst, Bruce Claflin, Parsian K. Mohseni, Zhenqiang Ma, Shui-Qing Yu","doi":"arxiv-2409.09752","DOIUrl":null,"url":null,"abstract":"Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of\na direct bandgap and CMOS compatibility. However, further improvements in laser\nperformance have been bottlenecked by limited junction properties of GeSn\nthrough conventional epitaxy and wafer bonding. This work leverages\nsemiconductor grafting to synthesize and characterize optically pumped ridge\nedge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed\nonto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3\nlayer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW\nat 77 K and a maximum lasing temperature of 130 K. These results highlight the\npotential of the grafting technique for enhancing charge carrier and optical\nfield confinements, paving the way for room-temperature electrically injected\nGeSn lasers.","PeriodicalId":501214,"journal":{"name":"arXiv - PHYS - Optics","volume":"31 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.09752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of
a direct bandgap and CMOS compatibility. However, further improvements in laser
performance have been bottlenecked by limited junction properties of GeSn
through conventional epitaxy and wafer bonding. This work leverages
semiconductor grafting to synthesize and characterize optically pumped ridge
edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed
onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3
layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW
at 77 K and a maximum lasing temperature of 130 K. These results highlight the
potential of the grafting technique for enhancing charge carrier and optical
field confinements, paving the way for room-temperature electrically injected
GeSn lasers.
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