Probing band topology in ABAB and ABBA stacked twisted double bilayer graphene

Jundong Zhu, Le Liu, Yalong Yuan, Jinwei Dong, Yanbang Chu, Luojun Du, Kenji Watanabe, Takashi Taniguchi, Jianpeng Liu, Quansheng Wu, Dongxia Shi, Wei Yang, Guangyu Zhang
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Abstract

Twisted graphene moire superlattice has been demonstrated as an exotic platform for investigating correlated states and nontrivial topology. Among the moire family, twisted double bilayer graphene (TDBG) is a tunable flat band system expected to show stacking-dependent topological properties. However, electron correlations and the band topology are usually intertwined in the flat band limit, rendering the unique topological property due to stacking still elusive. Focusing on a large-angle TDBG with weak electron correlations, here we probe the Landau level (LL) spectra in two differently stacked TDBG, i.e. ABBA- and ABAB-TDBG, to unveil their distinct topological properties. For ABBA-TDBG, we observe non-trivial topology at zero electric displacement filed, evident from both the emergence of Chern bands from half fillings and the closure of gap at CNP above a critical magnetic field. For ABAB-TDBG, by contrast, we find that the moire band is topologically trivial, supported by the absence of LLs from half fillings and the persistence of the gap at CNP above the critical magnetic fields. In addition, we also observe an evolution of the trivial-to-nontrivial topological transition at finite D fields, confirmed by the emerged Landau fans originating from quarter filling v = 1. Our result demonstrates, for the first time, the unique stacking-dependent topology in TDBG, offering a promising avenue for future investigations on topological states in correlated systems.
探测 ABAB 和 ABBA 叠层扭曲双双层石墨烯的带拓扑结构
扭曲石墨烯摩尔超晶格已被证明是研究相关态和非奇异拓扑的奇异平台。在石墨烯家族中,扭曲双双层石墨烯(TDBG)是一种可调的扁平带系统,有望显示出堆叠依赖的拓扑特性。然而,在平带极限中,电子相关性和带拓扑通常是交织在一起的,使得堆叠导致的独特拓扑特性变得模糊不清。在此,我们以具有弱电子相关性的大角度 TDBG 为研究对象,探测了两种不同堆叠方式 TDBG(即 ABBA- 和 ABAB-TDBG)的朗道水平(LL)光谱,以揭示它们不同的拓扑性质。对于 ABBA-TDBG,我们观察到零电位移时的非三维拓扑,这一点从半填充出现的切尔带和临界磁场以上 CNP 的间隙闭合可以看出。相比之下,对于 ABAB-TDBG,我们发现摩尔带在拓扑上是琐碎的,这得益于半填充不产生 LLs 以及临界磁场以上 CNP 处间隙的持续存在。此外,我们还观察到在有限 D 磁场下琐碎拓扑转变到非琐碎拓扑转变的演化过程,这一点得到了源于四分之一填充 v = 1 的朗道扇的证实。我们的研究结果首次证明了 TDBG 中独特的堆叠依赖拓扑结构,为未来研究相关系统中的拓扑状态提供了一条前景广阔的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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