Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes

Péter Udvarhelyi, Prineha Narang
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Abstract

Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here we investigate a family of possible isoelectronic emitter defect complexes from a design standpoint. We show that the identification of key physical effects on quantum defect state localization can guide the search for telecom wavelength emitters. We demonstrate this by performing first-principles calculations on the Q center, predicting its charged sodium variants possessing ideal emission wavelength near the lowest-loss telecom bands and ground state spin for possible spin-photon interface and nanoscale spin sensor applications yet to be explored in experiments.
基于碱金属饱和空位复合物的硅电信波长量子发射器设计
硅中的缺陷发射器很有希望成为固态量子中继器和传感器网络的构件。在这里,我们从设计的角度研究了一系列可能的等电子发射器缺陷复合物。我们发现,识别量子缺陷状态定位的关键物理效应可以为寻找电信波长发射器提供指导。我们通过对 Q 中心进行第一性原理计算,预测其带电钠变体拥有接近最低损耗电信波段的理想发射波长和基态自旋,从而证明了这一点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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