Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices

Hanbo Sun, Yewei Ren, Chao Wu, Pengqiang Dong, Weixi Zhang, Yin-Zhong Wu, Ping Li
{"title":"Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices","authors":"Hanbo Sun, Yewei Ren, Chao Wu, Pengqiang Dong, Weixi Zhang, Yin-Zhong Wu, Ping Li","doi":"arxiv-2409.06181","DOIUrl":null,"url":null,"abstract":"In order to promote the development of the next generation of nano-spintronic\ndevices, it is of great significance to tune the freedom of valley in\ntwo-dimensional (2D) materials. Here, we propose a mechanism for manipulating\nthe valley and nonlinear Hall effect by the 2D ferroelectric substrate. The\nmonolayer Mn2P2S3Se3 is a robust antiferromagnetic valley polarized\nsemiconductor. Importantly, the valley polarized metal-semiconductor phase\ntransition of Mn2P2S3Se3 can be effectively tuned by switching the\nferroelectric polarization of Sc2CO2. We reveal the microscopic mechanism of\nphase transition, which origins from the charge transfer and band alignment.\nAdditionally, we find that transformed polarization direction of Sc2CO2\nflexibly manipulate the Berry curvature dipole. Based on this discovery, we\npresent the detection valley polarized metal-semiconductor transition by the\nnonlinear Hall effect devices. These findings not only offer a scheme to tune\nthe valley degree of freedom, but also provide promising platform to design the\nnonlinear Hall effect devices.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Mesoscale and Nanoscale Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.06181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and nonlinear Hall effect by the 2D ferroelectric substrate. The monolayer Mn2P2S3Se3 is a robust antiferromagnetic valley polarized semiconductor. Importantly, the valley polarized metal-semiconductor phase transition of Mn2P2S3Se3 can be effectively tuned by switching the ferroelectric polarization of Sc2CO2. We reveal the microscopic mechanism of phase transition, which origins from the charge transfer and band alignment. Additionally, we find that transformed polarization direction of Sc2CO2 flexibly manipulate the Berry curvature dipole. Based on this discovery, we present the detection valley polarized metal-semiconductor transition by the nonlinear Hall effect devices. These findings not only offer a scheme to tune the valley degree of freedom, but also provide promising platform to design the nonlinear Hall effect devices.
Mn2P2S3Se3/Sc2CO2 范德瓦尔斯异质结构中谷极化金属-半导体转变的铁电调谐及其在非线性霍尔效应器件中的应用
为了促进下一代纳米自旋电子器件的发展,调控二维(2D)材料中的自由谷具有重要意义。在此,我们提出了一种通过二维铁电基底来操纵山谷和非线性霍尔效应的机制。单层 Mn2P2S3Se3 是一种坚固的反铁磁性谷极化半导体。重要的是,Mn2P2S3Se3 的谷极化金属半导体相位转换可以通过切换 Sc2CO2 的铁电极化进行有效调节。我们揭示了相变的微观机理,它源于电荷转移和能带排列。此外,我们还发现,Sc2CO2 极化方向的转换可以灵活地操纵贝里曲率偶极子。基于这一发现,我们提出了利用当时的非线性霍尔效应器件检测谷极化金属-半导体转变的方法。这些发现不仅提供了一种调整谷自由度的方案,还为设计当时的非线性霍尔效应器件提供了前景广阔的平台。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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