Development of large scale CVD grown two dimensional materials for field-effect transistors, thermally-driven neuromorphic memory, and spintronics applications
{"title":"Development of large scale CVD grown two dimensional materials for field-effect transistors, thermally-driven neuromorphic memory, and spintronics applications","authors":"Sameer Kumar Mallik","doi":"arxiv-2409.07357","DOIUrl":null,"url":null,"abstract":"Semiconductor research has shifted towards exploring two-dimensional (2D)\nmaterials as candidates for next-generation electronic devices due to the\nlimitations of existing silicon technology. Transition Metal Dichalcogenides\n(TMDCs) stand out for their exceptional optoelectronic properties and potential\nfor advanced device integration. This thesis focuses on the synthesis of 2D\nTMDCs using Chemical Vapor Deposition (CVD) for their potential applications in\ntransistors, memory, and neuromorphic computing. By optimizing the\nNaCl-assisted CVD method and examining their optical properties through Raman\nand photoluminescence spectroscopy, challenges such as premature growth,\ndefects, and non-uniformity in MoS2 samples are addressed. The thesis\nhighlights device fabrication techniques and electrical performance of\nsalt-assisted CVD-grown MoS2 field-effect transistors, which exhibit\nhysteresis-free behavior and high field-effect mobility. A novel etching-free\ntransfer technique is introduced, improving transistor performance and enabling\napplications in flexible optoelectronics. The thesis also explores monolayer\nMoS2 mem-transistors, demonstrating multifunctional room temperature transistor\nand high-temperature multi-level memory behaviour. These devices leverage\ninterfacial physics and ion dynamics to achieve non-volatile memory with\nmulti-level storage capabilities. Additionally, high density memory devices\nusing monolayer WS2 are developed, which demonstrate 6-bit memory operation\nwith neuromorphic biomimetic plasticity. The study also includes 2D TMDCs and\ntheir hetero-bilayers as potential 2D dilute magnetic semiconductors via\ndoping, strain engineering using density functional theory and micromagnetic\nsimulations, revealing potential applications in spintronics. This thesis makes\nsignificant contributions to advancing 2D materials for next-generation\nelectronics and spintronic devices.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"22 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Mesoscale and Nanoscale Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.07357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Semiconductor research has shifted towards exploring two-dimensional (2D)
materials as candidates for next-generation electronic devices due to the
limitations of existing silicon technology. Transition Metal Dichalcogenides
(TMDCs) stand out for their exceptional optoelectronic properties and potential
for advanced device integration. This thesis focuses on the synthesis of 2D
TMDCs using Chemical Vapor Deposition (CVD) for their potential applications in
transistors, memory, and neuromorphic computing. By optimizing the
NaCl-assisted CVD method and examining their optical properties through Raman
and photoluminescence spectroscopy, challenges such as premature growth,
defects, and non-uniformity in MoS2 samples are addressed. The thesis
highlights device fabrication techniques and electrical performance of
salt-assisted CVD-grown MoS2 field-effect transistors, which exhibit
hysteresis-free behavior and high field-effect mobility. A novel etching-free
transfer technique is introduced, improving transistor performance and enabling
applications in flexible optoelectronics. The thesis also explores monolayer
MoS2 mem-transistors, demonstrating multifunctional room temperature transistor
and high-temperature multi-level memory behaviour. These devices leverage
interfacial physics and ion dynamics to achieve non-volatile memory with
multi-level storage capabilities. Additionally, high density memory devices
using monolayer WS2 are developed, which demonstrate 6-bit memory operation
with neuromorphic biomimetic plasticity. The study also includes 2D TMDCs and
their hetero-bilayers as potential 2D dilute magnetic semiconductors via
doping, strain engineering using density functional theory and micromagnetic
simulations, revealing potential applications in spintronics. This thesis makes
significant contributions to advancing 2D materials for next-generation
electronics and spintronic devices.