Magnetic tunnel junctions with superlattice barriers

IF 2.7 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Applied Physics Pub Date : 2024-09-10 DOI:10.1063/5.0228748

Jing-Ci Su, Shih-Hung Cheng, Sin-You Huang, Wen-Jeng Hsueh

引用次数: 0

Abstract

The urgent demand for high-performance emerging memory, propelled by artificial intelligence in internet of things (AIoT) and machine learning advancements, spotlights spin-transfer torque magnetic random-access memory as a prime candidate for practical application. However, magnetic tunnel junctions (MTJs) with a single-crystalline MgO barrier, which are central to magnetic random-access memory (MRAM), suffer from significant drawbacks: insufficient endurance due to breakdown and high writing power requirements. A superlattice barrier-based MTJ (SL-MTJ) is proposed to overcome the limitation. We first fabricated the MTJ using an SL barrier while examining the magnetoresistance and resistance-area product. Lower writing power can be achieved in SL-MTJs compared to MgO-MTJs. Our study may provide a new route to the development of MRAM technologies.

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具有超晶格势垒的磁隧道结

在人工智能物联网（AIoT）和机器学习进步的推动下，对高性能新兴存储器的迫切需求凸显了自旋转移力矩磁随机存取存储器在实际应用中的首要候选。然而，作为磁性随机存取存储器（MRAM）核心的单晶氧化镁势垒磁隧道结（MTJ）存在明显缺陷：因击穿而导致的耐久性不足以及高写入功率要求。我们提出了一种基于超晶格势垒的 MTJ（SL-MTJ）来克服这一限制。我们首先使用超晶格势垒制造了 MTJ，同时研究了磁阻和电阻-面积乘积。与氧化镁 MTJ 相比，SL-MTJ 的写入功率更低。我们的研究可能会为 MRAM 技术的发展提供一条新的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Applied Physics 物理-物理：应用

CiteScore

5.40

自引率

9.40%

发文量

1534

审稿时长

2.3 months

期刊介绍： The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces