A New Paradigm for Semiconductor Manufacturing: Integrated Synthesis, Delivery, and Consumption of Source Chemicals for IC Fabrication

IF 2.9 3区 材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS
Coatings Pub Date : 2024-09-02 DOI:10.3390/coatings14091115
Barry Arkles, Alain E. Kaloyeros
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引用次数: 0

Abstract

The semiconductor industry is being radically impacted by the placing of greater emphasis on the development of hetero-devices and systems that will act as essential drivers for a wide spectrum of technological applications. The introduction of new materials and their integration with currently used materials are projected to replace integrated circuitry (IC) design and device scaling as the key enablers to the realization of improved device performance and larger density gains. Yet material selection has been constrained by existing fabrication process technology. To date, fabrication processes have dictated material selection by limiting chemical sources or precursors to those that match existing process tools associated with chemically based vapor phase processes and their variants, which in turn limits material compositions in ICs. The processing and integration of new materials compositions and structures will require the introduction of new deposition and etching processes, and manufacturing worthy tool designs and associated protocols that provide new methods for atomic-level control. To this end, a novel manufacturing paradigm is presented comprising a method and system for real-time, closed-loop monitoring and control of synthesis, supply, and consumption of precursors in process intensification techniques including chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer etching (ALE), and other IC manufacturing processes. This intelligent automated manufacturing approach is consistent with a central component of the semiconductor industry’s recent adoption of Industry 4.0., including vertical integration of IC manufacturing through robotization, artificial intelligence, and cloud computing. Furthermore, the approach eliminates several redundant steps in the synthesis, handling, and disposal of source precursors and their byproducts for CVD, ALD, ALE and other chemically based manufacturing processes, and thus ultimately lowers the manufacturing cost for both conventional and new IC materials. Further, by eliminating the issues associated with precursor thermal, chemical, and pyrophoric instabilities, this new paradigm enables the deposition of a myriad of new thin-film materials and compositions for IC applications that are practically unattainable with existing precursors. Preliminary and planned demonstration examples for the generation and deposition of highly toxic and unstable source precursors are provided.
半导体制造的新典范:集成电路制造源化学品的集成合成、交付和消费
半导体行业正受到越来越多异质器件和系统开发的影响,这些器件和系统将成为广泛技术应用的重要驱动力。预计新材料的引入及其与现有材料的集成将取代集成电路(IC)设计和器件扩展,成为实现更高的器件性能和更大的密度增益的关键因素。然而,材料选择一直受到现有制造工艺技术的限制。迄今为止,制造工艺决定了材料的选择,它将化学源或前驱体限制在与基于化学的气相工艺及其变体相关的现有工艺工具相匹配的化学源或前驱体上,这反过来又限制了集成电路中的材料成分。要加工和集成新的材料成分和结构,就需要引入新的沉积和蚀刻工艺,以及有价值的制造工具设计和相关规程,为原子级控制提供新的方法。为此,我们提出了一种新的制造模式,包括一种方法和系统,用于实时、闭环监测和控制工艺强化技术(包括化学气相沉积 (CVD)、原子层沉积 (ALD)、原子层蚀刻 (ALE) 和其他集成电路制造工艺)中前体的合成、供应和消耗。这种智能自动化制造方法与半导体行业最近采用的工业 4.0 的核心内容相一致,包括通过机器人、人工智能和云计算实现集成电路制造的垂直整合。此外,这种方法消除了 CVD、ALD、ALE 和其他化学制造工艺中源前体及其副产品的合成、处理和处置过程中的多个多余步骤,从而最终降低了传统和新型集成电路材料的制造成本。此外,由于消除了与前驱体热、化学和发热不稳定性相关的问题,这种新模式能够为集成电路应用沉积大量新型薄膜材料和成分,而现有的前驱体几乎无法实现这一点。本文提供了生成和沉积剧毒和不稳定源前驱体的初步和计划示范实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Coatings
Coatings Materials Science-Surfaces, Coatings and Films
CiteScore
5.00
自引率
11.80%
发文量
1657
审稿时长
1.4 months
期刊介绍: Coatings is an international, peer-reviewed open access journal of coatings and surface engineering. It publishes reviews, research articles, communications and technical notes. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. Full experimental and/or methodical details must be provided. There are, in addition, unique features of this journal: * manuscripts regarding research proposals and research ideas will be particularly welcomed * electronic files or software regarding the full details of the calculation and experimental procedure - if unable to be published in a normal way - can be deposited as supplementary material
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