Triazenide based metal precursors for vapour deposition

Abstract

Molecules featuring a metal centre in a positive valance surrounded by 1,3-dialkyltrianzenide ligands, Mx+(R–N=N–N–R’)x, were shown to have both high thermal stability and volatility, making them interesting as precursors in chemical vapour deposition (CVD) and atomic layer deposition (ALD). Several metals in groups 11-14 and lanthanoids form stable triazenides. So far, the In and Ga triazenides have proven to be excellent precursors for InN, In2O3, GaN and InGaN. We believe that we have only begun to explore the potential of triazenides as CVD and ALD precursors and hope to inspire further research with this perspective.