MOSFET-only Meminductor Emulator and its Application in Chaotic Oscillator

IF 1.8 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Aashish Kumar, Shireesh Kumar Rai
{"title":"MOSFET-only Meminductor Emulator and its Application in Chaotic Oscillator","authors":"Aashish Kumar, Shireesh Kumar Rai","doi":"10.1007/s00034-024-02833-9","DOIUrl":null,"url":null,"abstract":"<p>In this paper, a grounded meminductor emulator has been proposed using six MOSFETs (3NMOS and 3PMOS) only. Three transconductance stages and two capacitors are generally required to realize a meminductor emulator. Meminductor is considered as an inductor having memory. In the proposed design of meminductor emulator, the gyrator circuit is realized using common-source and common-gate amplifiers with one capacitor. The first capacitor is used to obtain the behaviour of inductance while the second capacitor is used for charge storage which acts as a memory element. In the proposed design of meminductor emulator, the gate-to-source capacitor of MOSFET is utilized in place of external capacitor for memory element. Therefore, the proposed design is free from the requirement of passive components as the required capacitor is formed by MOSFET. Also, the frequency characteristics of proposed meminductor are found to be satisfactory up to 100 MHz. The other essential characteristics such as non-volatility test, temperature analysis, tunability, Monte Carlo, and corner analysis are also found to be satisfactory. The proposed design of meminductor emulator is compared with other existing meminductor emulators. The performance of the emulator is successfully verified through the realization of chaotic oscillator circuit.</p>","PeriodicalId":10227,"journal":{"name":"Circuits, Systems and Signal Processing","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Circuits, Systems and Signal Processing","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s00034-024-02833-9","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, a grounded meminductor emulator has been proposed using six MOSFETs (3NMOS and 3PMOS) only. Three transconductance stages and two capacitors are generally required to realize a meminductor emulator. Meminductor is considered as an inductor having memory. In the proposed design of meminductor emulator, the gyrator circuit is realized using common-source and common-gate amplifiers with one capacitor. The first capacitor is used to obtain the behaviour of inductance while the second capacitor is used for charge storage which acts as a memory element. In the proposed design of meminductor emulator, the gate-to-source capacitor of MOSFET is utilized in place of external capacitor for memory element. Therefore, the proposed design is free from the requirement of passive components as the required capacitor is formed by MOSFET. Also, the frequency characteristics of proposed meminductor are found to be satisfactory up to 100 MHz. The other essential characteristics such as non-volatility test, temperature analysis, tunability, Monte Carlo, and corner analysis are also found to be satisfactory. The proposed design of meminductor emulator is compared with other existing meminductor emulators. The performance of the emulator is successfully verified through the realization of chaotic oscillator circuit.

Abstract Image

纯 MOSFET Meminductor 仿真器及其在混沌振荡器中的应用
本文提出了一种接地忆阻器仿真器,仅使用六个 MOSFET(3NMOS 和 3PMOS)。一般需要三个跨导级和两个电容器来实现忆阻器仿真器。记忆电感被视为具有记忆功能的电感器。在拟议的忆阻器仿真器设计中,回旋器电路是通过共源和共栅放大器以及一个电容器实现的。第一个电容器用于获得电感的特性,而第二个电容器则用于存储电荷,充当记忆元件。在拟议的忆阻器仿真器设计中,利用 MOSFET 的栅极至源极电容代替外部电容作为存储元件。因此,由于所需的电容是由 MOSFET 构成的,因此拟议的设计无需无源元件。此外,拟议的记忆电感器的频率特性也令人满意,最高可达 100 MHz。其他基本特性,如非挥发性测试、温度分析、可调谐性、蒙特卡罗和转角分析也令人满意。所提出的忆阻器仿真器设计与其他现有的忆阻器仿真器进行了比较。通过实现混沌振荡器电路,成功验证了仿真器的性能。
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来源期刊
Circuits, Systems and Signal Processing
Circuits, Systems and Signal Processing 工程技术-工程:电子与电气
CiteScore
4.80
自引率
13.00%
发文量
321
审稿时长
4.6 months
期刊介绍: Rapid developments in the analog and digital processing of signals for communication, control, and computer systems have made the theory of electrical circuits and signal processing a burgeoning area of research and design. The aim of Circuits, Systems, and Signal Processing (CSSP) is to help meet the needs of outlets for significant research papers and state-of-the-art review articles in the area. The scope of the journal is broad, ranging from mathematical foundations to practical engineering design. It encompasses, but is not limited to, such topics as linear and nonlinear networks, distributed circuits and systems, multi-dimensional signals and systems, analog filters and signal processing, digital filters and signal processing, statistical signal processing, multimedia, computer aided design, graph theory, neural systems, communication circuits and systems, and VLSI signal processing. The Editorial Board is international, and papers are welcome from throughout the world. The journal is devoted primarily to research papers, but survey, expository, and tutorial papers are also published. Circuits, Systems, and Signal Processing (CSSP) is published twelve times annually.
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