Study on the interstitial oxygen diffusion to understand the reduction of cryogenic RF loss for the superconducting radio-frequency niobium cavities

Mingming Yu, Shichun Huang, Yong Zhao, Xiangcheng Gu, Long Peng, Jiwei Lai, Tongtong Zhu, Yihan Wang, Andong Wu, Teng Tan, Yuan He, Hongwen Cao, Yunpeng Cao and Kun Zhang
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Abstract

Medium-temperature baking (Mid-T baking) is an innovative method employed to enhance the unloaded quality factor Q0 of superconducting radio-frequency niobium (SRF Nb) cavities at cryogenic temperatures. This study presents an interstitial oxygen diffusion model based on the decomposition of the natural oxide to clarify the improved performance of the Nb cavities after undergoing Mid-T baking. Additionally, the correlation between the interstitial oxygen within the RF penetration depth and the surface resistance of the Nb cavities has been explored. The parameter for the oxide decomposition was determined using in-situ x-ray photoelectron spectroscopy (XPS), where the thickness of the oxide/carbide layer was calculated from the peak fitting of Nb 3d spectra and the attenuation law of the photoelectron beam. The interstitial oxygen diffusion model, validated by the semi-quantitative distribution along the depth determined by time-of-flight secondary ion mass spectrometry, quantifies the oxygen atomic concentration within the RF penetration depth in Mid-T baked Nb material. In the baking temperature range of 300 °C–400 °C, the calculated oxygen concentration from the interstitial oxygen diffusion model demonstrates a more pronounced dependence on the baking temperature than the baking time. This suggests that more precise control of the interstitial oxygen concentration can be achieved by adjusting the baking temperature. Furthermore, it has been observed that maintaining a uniform and moderate oxygen concentration throughout the depth is essential for optimal Bardeen–Cooper–Schrieffer resistance. This study paves the way for more efficient processing optimization and enhancing understanding of the mechanism behind RF loss in Nb cavities.
研究间隙氧扩散以了解超导射频铌腔低温射频损耗的减少情况
中温烘烤(Mid-T baking)是一种创新方法,用于在低温条件下提高超导射频铌(SRF Nb)空穴的空载品质因数 Q0。本研究提出了一种基于天然氧化物分解的间隙氧扩散模型,以阐明经过 Mid-T 烘烤后铌空穴性能的提高。此外,还探讨了射频穿透深度内的间隙氧与铌空穴表面电阻之间的相关性。氧化物分解的参数是通过原位 X 射线光电子能谱(XPS)确定的,其中氧化物/碳化物层的厚度是根据 Nb 3d 光谱的峰拟合和光电子束的衰减规律计算得出的。通过飞行时间二次离子质谱测定的沿深度的半定量分布验证了间隙氧扩散模型,该模型量化了 Mid-T 烘焙铌材料射频穿透深度内的氧原子浓度。在 300 °C-400 °C 的焙烧温度范围内,根据间隙氧扩散模型计算出的氧浓度对焙烧温度的依赖性比对焙烧时间的依赖性更明显。这表明,通过调整烘烤温度可以更精确地控制间隙氧浓度。此外,研究还发现,在整个深度保持均匀适度的氧气浓度对于获得最佳的巴丁-库珀-施里弗抗性至关重要。这项研究为更有效地优化加工和加深了解铌腔射频损耗背后的机理铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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