Manipulating moires by controlling heterostrain in van der Waals devices

Ian Sequeira, Andrew Z. Barabas, Aaron H Barajas-Aguilar, Michaela G Bacani, Naoto Nakatsuji, Mikito Koshino, Takashi Taniguichi, Kenji Watanabe, Javier D. Sanchez-Yamagishi
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Abstract

Van der Waals (vdW) moires offer tunable superlattices that can strongly manipulate electronic properties. We demonstrate the in-situ manipulation of moire superlattices via heterostrain control in a vdW device. By straining a graphene layer relative to its hexagonal boron nitride substrate, we modify the shape and size of the moire. Our sliding-based technique achieves uniaxial heterostrain values exceeding 1%, resulting in distorted moires that are larger than those achievable without strain. The stretched moire is evident in transport measurements, resulting in shifted superlattice resistance peaks and Landau fans consistent with an enlarged superlattice unit cell. Electronic structure calculations reveal how heterostrain shrinks and distorts the moire Brillouin zone, resulting in a reduced electronic bandwidth as well as the appearance of highly anisotropic and quasi-1-dimensional Fermi surfaces. Our heterostrain control approach opens a wide parameter space of moire lattices to explore beyond what is possible by twist angle control alone.
通过控制范德瓦尔斯器件中的异应变操纵摩尔纹
范德瓦耳(vdW)莫尔提供了可调谐的超晶格,能够强烈操纵电子特性。我们展示了通过在 vdW 器件中进行异应变控制来原位操纵膜超晶格的方法。通过使石墨烯层相对于六方氮化硼基底产生应变,我们改变了摩尔层的形状和大小。我们基于滑动技术的单轴应变值超过了 1%,从而产生了比无应变时更大的扭曲摩尔纹。拉伸的摩尔纹在传输测量中非常明显,导致超晶格电阻峰和朗道扇偏移,与扩大的超晶格单元尺寸相一致。电子结构计算揭示了异应变如何缩小和扭曲了摩尔布里渊区,导致电子带宽减小以及出现高度各向异性和准一维费米面。我们的异应变控制方法开辟了摩尔晶格的广阔参数空间,使我们可以超越仅靠扭转角控制所能实现的探索。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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