{"title":"Tc and resistivity variation induced by external bending strain in flexible film of strain-sensitive (La,Sr)2CuO4","authors":"Tomoya Horide, Tomoaki Maekawa, Tatsuro Aikawa, Takanori Kitamura, Kazuma Nakamura","doi":"10.1103/physrevmaterials.8.094802","DOIUrl":null,"url":null,"abstract":"Strain in materials changes their electronic structure, and the strain response realizes rich material properties and devices. Superconductivity under hydrostatic pressure and epitaxial strain suggests significant response to an external variable strain in a single sample, but this has not yet been demonstrated because the strain is usually a fixed parameter after sample fabrication. <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mrow><mo>(</mo><mrow><mi>La</mi><mo>,</mo><mi>Sr</mi></mrow><mo>)</mo></mrow><mn>2</mn></msub><mi>Cu</mi><msub><mi mathvariant=\"normal\">O</mi><mn>4</mn></msub></mrow></math> films were fabricated on flexible metal substrates, and bending strain was applied to them to observe the critical temperature <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mo>(</mo><msub><mi>T</mi><mi mathvariant=\"normal\">c</mi></msub><mo>)</mo></mrow></math> and resistivity variation induced by strain. The compressive bending strain of −0.005 increased the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>T</mi><mi mathvariant=\"normal\">c</mi></msub></math> from 23.4 to 27.3 K. The magnitude of the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>T</mi><mi mathvariant=\"normal\">c</mi></msub></math> change by the bending strain is independent of the doping level and initial epitaxial strain. Furthermore, the irreversibility temperature was also improved by the compressive bending, and reasonable <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>T</mi><mi mathvariant=\"normal\">c</mi></msub></math> variation with respect to the reversible strain was observed. <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>A</mi></mrow></math><i>b initio</i> density functional calculation for the mother compound <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">L</mi><msub><mi mathvariant=\"normal\">a</mi><mn>2</mn></msub><mi>Cu</mi><msub><mi mathvariant=\"normal\">O</mi><mn>4</mn></msub></mrow></math> clarified that the low-energy electronic structures are sensitive to the bending strain. While the carriers (holes) are preferentially injected into the in-plane orbitals of the <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi>Cu</mi><msub><mi mathvariant=\"normal\">O</mi><mn>2</mn></msub></mrow></math> plane under the compressive strain, the tensile strain leads to the carrier injection into the perpendicular orbitals which is unfavorable to the superconductivity. The strain-sensitive high-<math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>T</mi><mi mathvariant=\"normal\">c</mi></msub></math> superconductor under the external strain highlights a new aspect for cuprate superconductors, which opens monitoring of the stress situation in the cryogenic systems such as superconducting magnet and liquid hydrogen container.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Review Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1103/physrevmaterials.8.094802","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Strain in materials changes their electronic structure, and the strain response realizes rich material properties and devices. Superconductivity under hydrostatic pressure and epitaxial strain suggests significant response to an external variable strain in a single sample, but this has not yet been demonstrated because the strain is usually a fixed parameter after sample fabrication. films were fabricated on flexible metal substrates, and bending strain was applied to them to observe the critical temperature and resistivity variation induced by strain. The compressive bending strain of −0.005 increased the from 23.4 to 27.3 K. The magnitude of the change by the bending strain is independent of the doping level and initial epitaxial strain. Furthermore, the irreversibility temperature was also improved by the compressive bending, and reasonable variation with respect to the reversible strain was observed. b initio density functional calculation for the mother compound clarified that the low-energy electronic structures are sensitive to the bending strain. While the carriers (holes) are preferentially injected into the in-plane orbitals of the plane under the compressive strain, the tensile strain leads to the carrier injection into the perpendicular orbitals which is unfavorable to the superconductivity. The strain-sensitive high- superconductor under the external strain highlights a new aspect for cuprate superconductors, which opens monitoring of the stress situation in the cryogenic systems such as superconducting magnet and liquid hydrogen container.
期刊介绍:
Physical Review Materials is a new broad-scope international journal for the multidisciplinary community engaged in research on materials. It is intended to fill a gap in the family of existing Physical Review journals that publish materials research. This field has grown rapidly in recent years and is increasingly being carried out in a way that transcends conventional subject boundaries. The journal was created to provide a common publication and reference source to the expanding community of physicists, materials scientists, chemists, engineers, and researchers in related disciplines that carry out high-quality original research in materials. It will share the same commitment to the high quality expected of all APS publications.