Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED
Jiacheng Xu, Rongzong Shen, Haoji Qian, Gaobo Lin, Jiani Gu, Jian Rong, Huan Liu, Yian Ding, Miaomiao Zhang, Yan Liu, Chengji Jin, Jiajia Chen, Genquan Han
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引用次数: 0

Abstract

We have characterized polarization switching kinetics of Hf0.5Zr0.5O2 (HZO) at cryogenic temperature (T) down to 100 K. By the nucleation-limited-switching model with Lorentzian distribution fittings, the dependences of the average switching time (log τ1) and switching time distribution (ω) on T are extracted. As T decreases from 300 to 100 K, log τ1 first rapidly decreases and then gradually stabilizes. Meanwhile, ω exhibits different trends under different external electric fields (Eext), decreasing under low Eext while increasing under high Eext, eventually stabilizing at non-zero constants. With the further decrease in T (<100 K), log τ1 and ω exhibited by HZO are almost unchanged, indicating the intrinsic properties of ferroelectric multiple domains, which are different from the prediction in previous literature studies that log τ1 and ω will linearly decrease as T decreases.
铁电体 Hf0.5Zr0.5O2 在低温下的极化转换动力学特征
我们研究了 Hf0.5Zr0.5O2 (HZO) 在低温(T)至 100 K 下的极化转换动力学。通过洛伦兹分布拟合的成核限制转换模型,我们提取了平均转换时间(log τ1)和转换时间分布(ω)对 T 的依赖关系。当温度从 300 K 下降到 100 K 时,log τ1 首先迅速下降,然后逐渐稳定。同时,ω 在不同的外电场(Eext)下表现出不同的趋势,在低 Eext 下减小,而在高 Eext 下增大,最终稳定在非零常数上。随着 T 值的进一步降低(<100 K),HZO 所表现出的对数τ1 和ω几乎没有变化,这表明了铁电多畴的固有特性,这与以往文献研究中关于对数τ1 和ω会随着 T 值降低而线性降低的预测不同。
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来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
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