Bandpass Filters with Increased to 3N+1 Number of Attenuation Poles

Q3 Engineering
Sergii Litvintsev, Alexander Zakharov
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Abstract

N-order bandpass filter (BPF) with parallel resonators and cross and mixed couplings can have (N + 1) transmission zeros (TZ) located on the complex plane s = σ + jω. TZs at real frequencies (jω axis) are also called attenuation poles (AP). The authors propose an alternative possibility of AP forming in filters using resonators with special properties, which significantly increases the AP number from (N + 1) to (3N + 1). Increasing the AP number with fewer resonators allows us to increase the selectivity and rejection level and reduce BPF insertion losses. The special properties of resonators are that their input admittance Y has one or two poles (ωp1, ωp2) located next to the resonance frequency ω0. This leads to the appearance of AP in a BPF. We propose and analyze three resonators with special properties. They are formed by a cascade connection of a quarter-wave resonator and lumped L and C. The input of the resonators is located on the side of the lumped elements. It was found that the Q-factors of lumped elements do not affect the filter losses in the passband. The reduction of QL and QC leads only to the decrease of the AP “depth.” For the first time, 7 APs were implemented in the experimental second-order microstrip BPF.

Abstract Image

衰减极数增至 3N+1 的带通滤波器
摘要 带有并联谐振器、交叉耦合器和混合耦合器的 N 阶带通滤波器(BPF)在复平面 s = σ + jω 上可能有 (N + 1) 个传输零点(TZ)。位于实际频率(jω 轴)的 TZ 也称为衰减极(AP)。作者提出了在滤波器中使用具有特殊性能的谐振器形成 AP 的另一种可能性,它能将 AP 数从 (N + 1) 显著增加到 (3N + 1)。用更少的谐振器来增加 AP 数量,可以提高选择性和抑制水平,减少 BPF 的插入损耗。谐振器的特殊属性是其输入导纳 Y 具有一个或两个极点(ωp1、ωp2),位于谐振频率 ω0 的旁边。这就导致在 BPF 中出现 AP。我们提出并分析了三个具有特殊性质的谐振器。它们由四分之一波谐振器与块状 L 和 C 级联而成。研究发现,叠加元件的 Q 因子不会影响滤波器在通带的损耗。QL 和 QC 的减小只会导致 AP "深度 "的减小。在实验二阶微带 BPF 中首次实现了 7 个 AP。
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来源期刊
Radioelectronics and Communications Systems
Radioelectronics and Communications Systems Engineering-Electrical and Electronic Engineering
CiteScore
2.10
自引率
0.00%
发文量
9
期刊介绍: Radioelectronics and Communications Systems  covers urgent theoretical problems of radio-engineering; results of research efforts, leading experience, which determines directions and development of scientific research in radio engineering and radio electronics; publishes materials of scientific conferences and meetings; information on scientific work in higher educational institutions; newsreel and bibliographic materials. Journal publishes articles in the following sections:Antenna-feeding and microwave devices;Vacuum and gas-discharge devices;Solid-state electronics and integral circuit engineering;Optical radar, communication and information processing systems;Use of computers for research and design of radio-electronic devices and systems;Quantum electronic devices;Design of radio-electronic devices;Radar and radio navigation;Radio engineering devices and systems;Radio engineering theory;Medical radioelectronics.
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