Perspectives on 2D materials for hybrid and beyond-Si image sensor applications

Abstract

The complementary metal–oxide–semiconductor (CMOS) image sensor has become essential and ubiquitous in our daily lives as it is present in almost every pocket. As demand for compact, multifunction, and high-efficiency Internet of Things applications continues to rise, novel configuration designs and manufacturing methods, such as neural network integration and 3D stacking have been implemented to enhance the CMOS image sensor’s (CIS) performance. However, the progress of image sensors based on silicon CMOS technology would eventually be limited by the intrinsic optical, electrical, and mechanical properties of silicon material. This has led to the exploration of two-dimensional materials (2DMs) and the emergence of 2DMs as promising candidates for the next generation of optoelectronic devices. In this article, we discuss the current advancements and challenges associated with silicon CISs and the potential benefits of incorporating 2DMs in the image sensor. We highlight three critical opportunities for 2DMs, including Si CMOS/2DMs hybrid structure and direct growth techniques of 2DMs on Si for back-end-of-line integration, 2DMs-based neuromorphic photodetectors (PDs) and optical neural networks for in-image-sensor-processing, and curved image sensor based on 2DMs PDs for bionic detection. With the growing maturity of 2DM technologies, we anticipate that the device scaling and the increase of integration density of 2DM electronics in the image sensor will continue, leading to the development of highly efficient, compact, intelligent, and versatile 2DM image sensors in the near future.