Magnetoresistance in two-dimensional materials and van der Waals heterostructures

IF 4.5 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Na Xin
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引用次数: 0

Abstract

Magnetoresistance (MR) refers to the alteration in electrical resistance within a material when influenced by a magnetic field. Studying MR at the atomic level holds a significant interest both in fundamental research and practical applications. Atomically thin two-dimensional (2D) van der Waals materials and their heterostructures offer an unprecedented platform to investigate MR, thanks to the very broad range of properties and no requirement for lattice matching. Here, we review the various mechanisms of MR effect in 2D materials and their heterostructures, including tunneling MR, extremely large unsaturated MR, layer MR, and colossal MR, as well as explore their potential in device applications. Furthermore, we discuss the limitations and main challenges that still exist for the development of practical devices based on MR and provide our considerations towards real applications.
二维材料和范德华异质结构中的磁阻
磁阻(MR)是指材料在受到磁场影响时电阻的变化。在原子层面研究磁阻在基础研究和实际应用中都具有重要意义。原子薄的二维(2D)范德华材料及其异质结构为研究磁阻提供了一个前所未有的平台,因为它们具有非常广泛的特性,而且对晶格匹配没有要求。在此,我们回顾了二维材料及其异质结构中的各种磁共振效应机制,包括隧道磁共振、超大不饱和磁共振、层磁共振和巨磁共振,并探讨了它们在器件应用中的潜力。此外,我们还讨论了在开发基于磁共振的实用器件时仍然存在的局限性和主要挑战,并提出了我们对实际应用的看法。
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来源期刊
2D Materials
2D Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
10.70
自引率
5.50%
发文量
138
审稿时长
1.5 months
期刊介绍: 2D Materials is a multidisciplinary, electronic-only journal devoted to publishing fundamental and applied research of the highest quality and impact covering all aspects of graphene and related two-dimensional materials.
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