Investigation of BGaN Layer in Photodetector Structure

IF 1.3 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IETE Journal of Research Pub Date : 2024-08-18 DOI:10.1080/03772063.2024.2390091

Zehor Allam, Badia Bouchachia, Chahrazad Boudaoud, Loumafak Hafaifa

引用次数: 0

Abstract

This study involves the design and simulation of a BGaN/GaN/ZnO/Al2O3 photodetector for UV/BLUE light with two different boron concentrations: 5% and 20%. The proposed photodetector structure exhib...

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光电探测器结构中的氮化镓层研究

本研究涉及设计和模拟一个 BGaN/GaN/ZnO/Al2O3 光电探测器，该探测器用于紫外线/蓝光，具有两种不同的硼浓度：5%和 20%。所提出的光电探测器结构显示出...

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来源期刊

IETE Journal of Research 工程技术-电信学

CiteScore

3.30

自引率

6.70%

发文量

308

期刊介绍： IETE Journal of Research is a Bimonthly journal published by the Institution of Electronics and Telecommunication Engineers (IETE), India. It publishes scientific and technical papers describing original research work or novel product/process development. Occasionally special issues are brought out on new and emerging research areas. IETE Journal of Research is useful to researchers, engineers, scientists, teachers, managers and students who are interested in keeping a track of original research and development work being carried out in the broad area of electronics, telecommunications, computer science and engineering and information technology.