Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates

IF 0.8 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
Seonwoo Park, Kyoung Hwa Kim, Suhyun Mun, Injun Jeon, Seon Jin Mun, Young-Hun Cho, Jeongbin Heo, Min Yang, Hyung Soo Ahn, Hunsoo Jeon, Jae Hak Lee, Kwanghee Jung, Won Jae Lee, Geon-Hee Lee, Myeong-Cheol Shin, Jong-Min Oh, Weon Ho Shin, Minkyung Kim, Sang-Mo Koo, Ye Hwan Kang
{"title":"Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates","authors":"Seonwoo Park, Kyoung Hwa Kim, Suhyun Mun, Injun Jeon, Seon Jin Mun, Young-Hun Cho, Jeongbin Heo, Min Yang, Hyung Soo Ahn, Hunsoo Jeon, Jae Hak Lee, Kwanghee Jung, Won Jae Lee, Geon-Hee Lee, Myeong-Cheol Shin, Jong-Min Oh, Weon Ho Shin, Minkyung Kim, Sang-Mo Koo, Ye Hwan Kang","doi":"10.1007/s40042-024-01170-z","DOIUrl":null,"url":null,"abstract":"<p>An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a graphite boat structure with a vertical source and growth zones was used, and the sublimation sandwich method was improved by directly attaching two substrates (without any spacing between them) differently from that of the existing sublimation sandwich method. After the deposition of the amorphous Si layer (using sputtering) on an SiC substrate, the recrystalline Si layer was formed at a temperature of 1250 °C using a SiCl<sub>n</sub> source. Consequently, an Si layer with characteristics different from those of the sputtered Si layer was grown. The formed Si layer was characterized using field-emission scanning electron microscopy, energy-dispersive spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy. Overall, we propose an advanced HVPE sublimation sandwich method for forming Si layers on SiC substrates.</p>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1007/s40042-024-01170-z","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a graphite boat structure with a vertical source and growth zones was used, and the sublimation sandwich method was improved by directly attaching two substrates (without any spacing between them) differently from that of the existing sublimation sandwich method. After the deposition of the amorphous Si layer (using sputtering) on an SiC substrate, the recrystalline Si layer was formed at a temperature of 1250 °C using a SiCln source. Consequently, an Si layer with characteristics different from those of the sputtered Si layer was grown. The formed Si layer was characterized using field-emission scanning electron microscopy, energy-dispersive spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy. Overall, we propose an advanced HVPE sublimation sandwich method for forming Si layers on SiC substrates.

Abstract Image

在碳化硅基底上形成硅层的先进 HVPE 升华夹层法
利用先进的氢化物气相外延(HVPE)方法改进了在碳化硅基底上形成硅层的升华三明治法。该研究采用了具有垂直源区和生长区的石墨舟结构,并通过直接连接两个基底(基底之间没有任何间距)改进了升华三明治法,这与现有的升华三明治法不同。在碳化硅衬底上沉积非晶硅层(使用溅射法)后,使用碳化硅源在 1250 ℃ 的温度下形成再结晶硅层。因此,生长出了与溅射硅层特性不同的硅层。我们使用场发射扫描电子显微镜、能量色散光谱、高分辨率 X 射线衍射、X 射线光电子能谱、二次离子质谱和原子力显微镜对形成的硅层进行了表征。总之,我们提出了一种在碳化硅基底上形成硅层的先进 HVPE 升华夹层法。
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来源期刊
Journal of the Korean Physical Society
Journal of the Korean Physical Society PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.20
自引率
16.70%
发文量
276
审稿时长
5.5 months
期刊介绍: The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
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