Surface Defects Passivation of ZnSeTe/ZnSe/ZnS Quantum Dots by Iodine Ions for Highly Efficient Blue Light‐Emitting Diodes

IF 8 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Optical Materials Pub Date : 2024-09-11 DOI:10.1002/adom.202401884

Zhongyuan Guan, Yang Huang, Zhaojin Wang, Jiayun Sun, Chengwei Shan, Yiguo Xu, Dan Wu, Aiwei Tang, Xiao Wei Sun, Kai Wang

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Abstract

The development of cadmium‐free blue quantum dots (QDs) is of paramount importance to the display industry. In this study, high‐quality ZnSeTe/ZnSe/ZnS blue QDs, followed by surface treatment with ZnI2 are initially synthesized. The introduction of ZnI2 passivated the surface defects, resulting in an increase in the fluorescence quantum yield. The time‐resolved photoluminescence (TRPL) demonstrates a significant inhibition of non‐radiative recombination associated with the surface defect state. The density functional theory (DFT) calculation reveals that the binding energy between iodine ions and zinc ions is higher than that between oleate ions and zinc ions, providing a theoretical basis for the effective passivation of the suspended bonds of zinc ions on QDs' surface by iodine ions. Moreover, quantum dot light‐emitting diodes (QLEDs) are fabricated and UV photoelectron spectra (UPS) indicate the hole injection barrier between the hole transport layer and QDs decreases 0.12 eV after QDs being treated by ZnI2, facilitating hole injection. Finally, The ZnI2‐treated QLED demonstrates a 1.57‐fold and 1.82‐fold improvement in Lmax and EQEmax, respectively, reaching 6370 cd m−2 and 9.1%, compared to the pristine QLED. The work serves as a valuable reference for enhancing the performance of cadmium‐free blue QLED.

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碘离子钝化 ZnSeTe/ZnSe/ZnS 量子点表面缺陷，实现高效蓝色发光二极管

开发无镉蓝色量子点（QDs）对显示行业至关重要。本研究首先合成了高质量的 ZnSeTe/ZnSe/ZnS 蓝色量子点，然后用 ZnI2 进行表面处理。ZnI2 的引入钝化了表面缺陷，从而提高了荧光量子产率。时间分辨光致发光（TRPL）表明，与表面缺陷状态相关的非辐射重组受到了显著抑制。密度泛函理论（DFT）计算表明，碘离子与锌离子的结合能高于油酸根离子与锌离子的结合能，这为碘离子有效钝化量子点表面锌离子的悬浮键提供了理论依据。此外，还制备了量子点发光二极管（QLED），紫外光电子能谱（UPS）显示，经 ZnI2 处理后的 QDs 与空穴传输层之间的空穴注入势垒降低了 0.12 eV，从而促进了空穴注入。最后，与原始 QLED 相比，经过 ZnI2 处理的 QLED 的 Lmax 和 EQEmax 分别提高了 1.57 倍和 1.82 倍，达到 6370 cd m-2 和 9.1%。这项研究为提高无镉蓝色 QLED 的性能提供了宝贵的参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Optical Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-OPTICS

CiteScore

13.70

自引率

6.70%

发文量

883

审稿时长

1.5 months

期刊介绍： Advanced Optical Materials, part of the esteemed Advanced portfolio, is a unique materials science journal concentrating on all facets of light-matter interactions. For over a decade, it has been the preferred optical materials journal for significant discoveries in photonics, plasmonics, metamaterials, and more. The Advanced portfolio from Wiley is a collection of globally respected, high-impact journals that disseminate the best science from established and emerging researchers, aiding them in fulfilling their mission and amplifying the reach of their scientific discoveries.