Plasmon–phonon gain in CdHgTe structures with near-surface HgTe quantum wells

IF 2 4区物理与天体物理 Q3 OPTICS

Journal of Optics Pub Date : 2024-08-28 DOI:10.1088/2040-8986/ad6e9c

V Ya Aleshkin, A O Rudakov, A A Dubinov, S V Morozov

引用次数: 0

Abstract

The work is devoted to the study of plasmon–phonon gain in CdHgTe/HgTe structures with quantum wells (QWs) located near the boundary of the structure with vacuum/air (near-surface QWs). The issue of the influence of the distance between QWs on the plasmon–phonon gain has been studied. It has been shown that a decrease in the distance from the nearest QW to the structure boundary leads to an increase in the phase velocity of the generated plasmon–phonon and a decrease in the power absorbed by phonons in the barriers. This leads to a decrease in the threshold concentration of nonequilibrium carriers required to begin of plasmon–phonon gain under conditions of optical excitation.

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带有近表面碲镉汞量子阱的碲镉汞结构中的等离子体-声子增益

这项工作致力于研究碲镉汞/碲镉结构中的质子-声子增益，其量子阱（QW）位于结构与真空/空气的边界附近（近表面 QW）。我们研究了量子阱之间的距离对等离子体-声子增益的影响问题。研究表明，从最近的 QW 到结构边界的距离减小，会导致所产生的质子-声子的相位速度增加，以及声子在势垒中吸收的功率减小。这导致在光激发条件下开始等离子-声子增益所需的非平衡载流子阈值浓度降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Optics OPTICS-

CiteScore

4.50

自引率

4.80%

发文量

237

审稿时长

1.9 months

期刊介绍： Journal of Optics publishes new experimental and theoretical research across all areas of pure and applied optics, both modern and classical. Research areas are categorised as: Nanophotonics and plasmonics Metamaterials and structured photonic materials Quantum photonics Biophotonics Light-matter interactions Nonlinear and ultrafast optics Propagation, diffraction and scattering Optical communication Integrated optics Photovoltaics and energy harvesting We discourage incremental advances, purely numerical simulations without any validation, or research without a strong optics advance, e.g. computer algorithms applied to optical and imaging processes, equipment designs or material fabrication.