Charge ordering and spontaneous topological Hall effect in bilayer skyrmion crystals

Andrew Hardy, Anjishnu Bose, Tanmay Grover, Arun Paramekanti
{"title":"Charge ordering and spontaneous topological Hall effect in bilayer skyrmion crystals","authors":"Andrew Hardy, Anjishnu Bose, Tanmay Grover, Arun Paramekanti","doi":"arxiv-2409.04520","DOIUrl":null,"url":null,"abstract":"Magnetic skyrmion crystals with zero net skyrmion charge and zero topological\nHall response are interesting candidate phases which can occur at a vanishing\nmagnetic field in centrosymmetric systems. We study a minimal bilayer model of\nskyrmion crystals having opposite chirality and topological charge in the two\nlayers, and show that it can host nearly flat electronic bands with\nquasi-uniform Berry curvature and quantum metric. Using Hartree-Fock theory, we\nshow that weak to moderate short-range electron interactions induce two\ndistinct types of symmetry breaking patterns depending on the band dispersion:\nan intra-unit-cell charge density modulation from Chern band mixing or a\nlayer-imbalanced phase with a nonzero ferroelectric polarization. Both phases\nbreak inversion symmetry leading to a spontaneous and large net topological\nHall effect, with the phase diagram tunable by external electric fields. Our\nresults may be relevant to centrosymmetric skyrmion materials such as\nGd$_2$PdSi$_3$ and Gd$_3$Ru$_4$Al$_{12}$ as well as artificially engineered\nheterostructures. We also discuss its relation to recent work on twisted\ntransition metal dichalcogenide bilayers.","PeriodicalId":501171,"journal":{"name":"arXiv - PHYS - Strongly Correlated Electrons","volume":"59 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Strongly Correlated Electrons","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.04520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Magnetic skyrmion crystals with zero net skyrmion charge and zero topological Hall response are interesting candidate phases which can occur at a vanishing magnetic field in centrosymmetric systems. We study a minimal bilayer model of skyrmion crystals having opposite chirality and topological charge in the two layers, and show that it can host nearly flat electronic bands with quasi-uniform Berry curvature and quantum metric. Using Hartree-Fock theory, we show that weak to moderate short-range electron interactions induce two distinct types of symmetry breaking patterns depending on the band dispersion: an intra-unit-cell charge density modulation from Chern band mixing or a layer-imbalanced phase with a nonzero ferroelectric polarization. Both phases break inversion symmetry leading to a spontaneous and large net topological Hall effect, with the phase diagram tunable by external electric fields. Our results may be relevant to centrosymmetric skyrmion materials such as Gd$_2$PdSi$_3$ and Gd$_3$Ru$_4$Al$_{12}$ as well as artificially engineered heterostructures. We also discuss its relation to recent work on twisted transition metal dichalcogenide bilayers.
双层锡兰晶体中的电荷有序和自发拓扑霍尔效应
在中心对称系统中,具有零净天电荷和零拓扑霍尔响应的磁性天电荷晶体是一种有趣的候选相,可以出现在消失磁场中。我们研究了一种具有相反手性和双层拓扑电荷的最小双层天电荷晶体模型,结果表明它可以容纳具有准均匀贝里曲率和量子度量的近乎平坦的电子带。利用哈特里-福克理论,我们发现弱到中等程度的短程电子相互作用会诱发两种不同类型的对称性破坏模式,这取决于带散布情况:一种是由切尔带混合产生的单元内电荷密度调制,另一种是具有非零铁电极化的层平衡相。这两种相位都会打破反转对称性,从而产生自发的、巨大的净拓扑霍尔效应,相图可通过外部电场进行调整。我们的研究结果可能与中心对称天电离子材料有关,如 Gd$_2$PdSi$_3$ 和 Gd$_3$Ru$_4$Al$_{12}$ 以及人工工程异质结构。我们还讨论了它与最近在扭曲过渡金属二卤化物双层结构方面所做工作的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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