{"title":"Large spontaneous Hall effect with flexible domain control in an antiferromagnetic material TaMnP","authors":"Hisashi Kotegawa, Akira Nakamura, Vu Thi Ngoc Huyen, Yuki Arai, Hideki Tou, Hitoshi Sugawara, Junichi Hayashi, Keiki Takeda, Chihiro Tabata, Koji Kaneko, Katsuaki Kodama, Michi-To Suzuki","doi":"arxiv-2409.04064","DOIUrl":null,"url":null,"abstract":"Antiferromagnets without parity-time ($\\mathcal{PT}$) symmetry offer novel\nperspectives in the field of functional magnetic materials. Among them, those\nwith ferromagnetic-like responses are promising candidates for future\napplications such as antiferromagnetic (AF) memory; however, examples showing\nlarge effects are extremely limited. In this study, we show that the\northorhombic system TaMnP exhibits a large anomalous Hall conductivity (AHC)\n$\\sim360-370$ $\\Omega^{-1}$cm$^{-1}$ in spite of the small net magnetization\n$\\sim10^{-2}$ $\\mu_B$/Mn. Our neutron scattering experiment and the observation\nof the AH effect indicated that a magnetic structure of TaMnP was dominated by\nan AF component represented by $B_{3g}$ with the propagation vector $q=0$.\nFurthermore, we confirmed that the obtained AHC is among the largest observed\nin AF materials at zero fields. Additionally, our first-principles calculations\nrevealed that the spin-orbit interaction originating in the nonmagnetic Ta-$5d$\nelectrons significantly contributes to enhancing Berry curvatures in the\nmomentum space. We found that the magnetic fields along all the crystal axes\ntriggered the AF domain switching, indicating the possibility of controlling\nthe AF domain using the small net magnetization, which is symmetrically\ndifferent.","PeriodicalId":501171,"journal":{"name":"arXiv - PHYS - Strongly Correlated Electrons","volume":"154 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Strongly Correlated Electrons","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.04064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Antiferromagnets without parity-time ($\mathcal{PT}$) symmetry offer novel
perspectives in the field of functional magnetic materials. Among them, those
with ferromagnetic-like responses are promising candidates for future
applications such as antiferromagnetic (AF) memory; however, examples showing
large effects are extremely limited. In this study, we show that the
orthorhombic system TaMnP exhibits a large anomalous Hall conductivity (AHC)
$\sim360-370$ $\Omega^{-1}$cm$^{-1}$ in spite of the small net magnetization
$\sim10^{-2}$ $\mu_B$/Mn. Our neutron scattering experiment and the observation
of the AH effect indicated that a magnetic structure of TaMnP was dominated by
an AF component represented by $B_{3g}$ with the propagation vector $q=0$.
Furthermore, we confirmed that the obtained AHC is among the largest observed
in AF materials at zero fields. Additionally, our first-principles calculations
revealed that the spin-orbit interaction originating in the nonmagnetic Ta-$5d$
electrons significantly contributes to enhancing Berry curvatures in the
momentum space. We found that the magnetic fields along all the crystal axes
triggered the AF domain switching, indicating the possibility of controlling
the AF domain using the small net magnetization, which is symmetrically
different.
无奇偶时($\mathcal{PT}$)对称性的反铁磁体为功能磁性材料领域提供了新的前景。其中,那些具有类似铁磁反应的反铁磁体是未来应用(如反铁磁(AF)存储器)的有希望的候选材料;然而,显示出巨大效应的例子却极为有限。在这项研究中,我们发现正交体系 TaMnP 尽管净磁化率很小,但却表现出很大的反常霍尔电导率(AHC)$\sim360-370$$\Omega^{-1}$cm$^{-1}$。我们的中子散射实验和对AH效应的观察表明,TaMnP的磁性结构主要由传播矢量$q=0$的AF分量所代表,即$B_{3g}$。此外,我们的第一原理计算还揭示了源自非磁性 Ta-$5d$ 电子的自旋轨道相互作用对增强动量空间中的贝里曲率有显著作用。我们发现,沿所有晶体轴的磁场都能触发 AF 域的切换,这表明利用对称性不同的小净磁化控制 AF 域是可能的。