Nernst Plateau in the Quantum Limit of Topological Insulators

Peng-Lu Zhao, J. L. Zhang, Hai-Zhou Lu, Qian Niu
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Abstract

Nernst effect, a transverse electric current induced by a temperature gradient, is a promising tool for revealing emergent phases of condensed matter. We find a Nernst coefficient plateau in low carrier density topological insulators, as a signature of 1D Weyl points in the quantum limit of the weak topological insulator. The plateau height is inversely proportional to the impurity density, suggesting a way to engineer infinitely large Nernst effects. The Nernst plateau also exists in strong topological insulators, at the bottom of the lowest Landau band. We show that these plateaus have been overlooked in the previous experiments and we highlight the experimental conditions to observe them. Our results may inspire more investigations of employing anomalous Nernst effect to identify emergent phases of condensed matter.
拓扑绝缘体量子极限中的奈恩斯特高原
纳斯特效应是一种由温度梯度诱导的横向电流,是揭示凝聚态出现相的一种很有前途的工具。我们在低载流子密度拓扑绝缘体中发现了一个奈氏系数高原,这是弱拓扑绝缘体量子极限中一维韦尔点的特征。高原高度与杂质密度成反比,这表明有一种方法可以设计出无限大的奈恩斯特效应。奈恩斯特高原也存在于强拓扑绝缘体中,位于最低朗道带的底部。我们发现这些高原在以前的实验中被忽视了,并强调了观测它们的实验条件。我们的研究结果可能会激发更多的研究,利用反常的奈恩斯特效应来识别凝聚态物质的出现相。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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