S. A. Kukushkin, A. V. Osipov, A. V. Redkov, V. M. Stozharov, E. V. Ubiyvovk, Sh. Sh. Sharofidinov
{"title":"Peculiarities of Nucleation and Growth of InGaN Nanowires on SiC/Si Substrates by HVPE","authors":"S. A. Kukushkin, A. V. Osipov, A. V. Redkov, V. M. Stozharov, E. V. Ubiyvovk, Sh. Sh. Sharofidinov","doi":"10.1134/s1063785023170145","DOIUrl":null,"url":null,"abstract":"<p><b>Abstract</b>—The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000°C). On substrates with orientations (110) and (111), the formation of InGaN whisker nanocrystals was observed. The shape and growth mechanisms of nanocrystals were investigated. It is shown that nanocrystals nucleate on the (111) surface only inside <i>V</i>-defects formed at the points where screw dislocations exit onto the surface. On the (110) surface, nanocrystals are formed only on pedestals that arise during the film growth. An explanation is given for the difference in the growth mechanisms of nanocrystals on substrates of different orientations.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063785023170145","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract—The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000°C). On substrates with orientations (110) and (111), the formation of InGaN whisker nanocrystals was observed. The shape and growth mechanisms of nanocrystals were investigated. It is shown that nanocrystals nucleate on the (111) surface only inside V-defects formed at the points where screw dislocations exit onto the surface. On the (110) surface, nanocrystals are formed only on pedestals that arise during the film growth. An explanation is given for the difference in the growth mechanisms of nanocrystals on substrates of different orientations.
期刊介绍：
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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