Growth Mechanism of Monolayer on the Top Facet of Ga-Catalyzed GaAs and GaP Nanowires

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-08-29 DOI:10.1134/s1063785023170133

A. A. Koryakin, Yu. A. Eremeev, S. V. Fedina, V. V. Fedorov

引用次数: 0

Abstract—The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires.

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镓催化砷化镓和磷化镓纳米线顶面单层的生长机制

摘要研究了镓催化砷化镓和磷化镓纳米线顶面单层的生长机理。在理论模型的框架内，发现了催化剂液滴中材料导致的最大单层覆盖率、纳米线生长速率以及液滴中 V 族原子的含量取决于生长条件。通过比较镓催化 GaP 纳米线的理论生长率和实验生长率，得到了邻近纳米线和基底磷再蒸发系数的估计值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.