Elucidating the Differential Impacts of Equivalent Gating-Charge Mutations in Voltage-Gated Sodium Channels

Eslam Elhanafy, Amin Akbari Ahangar, Rebecca Roth, Tamer M Gamal El-Din, John R Bankston, Jing Li
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Abstract

Voltage-gated sodium (Nav) channels are pivotal for cellular signaling and mutations in Nav channels can lead to excitability disorders in cardiac, muscular, and neural tissues. A major cluster of pathological mutations localizes in the voltage-sensing domains (VSDs), resulting in either gain-of-function (GoF), loss-of-function (LoF) effects, or both. However, the mechanism behind this functional divergence of mutations at equivalent positions remains elusive. Through hotspot analysis, we identified three gating charges (R1, R2, and R3) as major mutational hotspots in VSDs. The same amino-acid substitutions at equivalent gating-charge positions in VSDI and VSDII of the cardiac sodium channel Nav1.5 show differential gating-property impacts in electrophysiology measurements. We conducted 120 μs molecular dynamics (MD) simulations on wild-type and six mutants to elucidate the structural basis of their differential impacts. Our μs-scale MD simulations with applied external electric fields captured VSD state transitions and revealed the differential structural dynamics between equivalent R-to-Q mutants. Notably, we observed transient leaky conformations in some mutants during structural transitions, offering a detailed structural explanation for gating-pore currents. Our salt-bridge network analysis uncovered VSD-specific and state-dependent interactions among gating charges, countercharges, and lipids. This detailed analysis elucidated how mutations disrupt critical electrostatic interactions, thereby altering VSD permeability and modulating gating properties. By demonstrating the crucial importance of considering the specific structural context of each mutation, our study represents a significant leap forward in understanding structure-function relationships in Nav channels. Our work establishes a robust framework for future investigations into the molecular basis of ion channel-related disorders.
阐明电压门控钠通道中等价门控电荷突变的不同影响
电压门控钠(Nav)通道是细胞信号传导的关键,Nav通道突变可导致心脏、肌肉和神经组织的兴奋性失调。病理突变主要集中在电压感应结构域(VSD),导致功能增益(GoF)、功能缺失(LoF)或两者兼而有之。然而,同等位置突变的功能差异背后的机制仍然难以捉摸。通过热点分析,我们发现三个门控电荷(R1、R2 和 R3)是 VSD 的主要突变热点。在电生理学测量中,心脏钠通道 Nav1.5 的 VSDI 和 VSDII 同等门控电荷位置上的相同氨基酸取代显示出不同的门控特性影响。我们对野生型和六个突变体进行了 120 μs 的分子动力学(MD)模拟,以阐明其不同影响的结构基础。我们在应用外加电场的 μs 级 MD 模拟中捕捉到了 VSD 的状态转换,并揭示了等效 R 到 Q 突变体之间的结构动态差异。值得注意的是,我们在一些突变体中观察到了结构转换期间的瞬时泄漏构象,这为栅孔电流提供了详细的结构解释。我们的盐桥网络分析揭示了门控电荷、反电荷和脂质之间的 VSD 特异性和状态依赖性相互作用。这一详细分析阐明了突变如何破坏关键的静电相互作用,从而改变 VSD 的通透性并调节门控特性。通过证明考虑每个突变的特定结构背景的极端重要性,我们的研究代表了在理解导航通道结构-功能关系方面的重大飞跃。我们的工作为今后研究离子通道相关疾病的分子基础建立了一个强有力的框架。
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