Wettability of Black Silicon Layers Formed by Different Methods

IF 0.5 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2024-09-09 DOI:10.1134/S1068337224700105

G. Y. Ayvazyan, A. A. Vardanyan, A. V. Semchenko

引用次数: 0

Abstract

The wettability of black silicon (b-Si) layers formed by reactive ion etching, metal-assisted chemical etching, and laser-induced etching has been studied. The wetting contact angles of the prepared samples with deionized water, glycerol, diiodomethane, and ethylene glycol were determined. It has been shown that the silicon oxide surface film and the enlargement area factor of b-Si layers have a significant influence on their wettability, varying from hydrophilic to hydrophobic properties.

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不同方法形成的黑硅层的润湿性

摘要研究了通过反应离子蚀刻、金属辅助化学蚀刻和激光诱导蚀刻形成的黑硅（b-Si）层的润湿性。测定了制备的样品与去离子水、甘油、二碘甲烷和乙二醇的润湿接触角。结果表明，氧化硅表面膜和 b-Si 层的增大面积因子对其润湿性有显著影响，其润湿性从亲水性到疏水性不等。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Contemporary Physics (Armenian Academy of Sciences) PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

66.70%

发文量

审稿时长

6-12 weeks

期刊介绍： Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.