Dismai-Bench: benchmarking and designing generative models using disordered materials and interfaces†

IF 6.2 Q1 CHEMISTRY, MULTIDISCIPLINARY
Adrian Xiao Bin Yong, Tianyu Su and Elif Ertekin
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Abstract

Generative models have received significant attention in recent years for materials science applications, particularly in the area of inverse design for materials discovery. However, these models are usually assessed based on newly generated, unverified materials, using heuristic metrics such as charge neutrality, which provide a narrow evaluation of a model's performance. Also, current efforts for inorganic materials have predominantly focused on small, periodic crystals (≤20 atoms), even though the capability to generate large, more intricate and disordered structures would expand the applicability of generative modeling to a broader spectrum of materials. In this work, we present the Disordered Materials & Interfaces Benchmark (Dismai-Bench), a generative model benchmark that uses datasets of disordered alloys, interfaces, and amorphous silicon (256–264 atoms per structure). Models are trained on each dataset independently, and evaluated through direct structural comparisons between training and generated structures. Such comparisons are only possible because the material system of each training dataset is fixed. Benchmarking was performed on two graph diffusion models and two (coordinate-based) U-Net diffusion models. The graph models were found to significantly outperform the U-Net models due to the higher expressive power of graphs. While noise in the less expressive models can assist in discovering materials by facilitating exploration beyond the training distribution, these models face significant challenges when confronted with more complex structures. To further demonstrate the benefits of this benchmarking in the development process of a generative model, we considered the case of developing a point-cloud-based generative adversarial network (GAN) to generate low-energy disordered interfaces. We tested different GAN architectures and identified reasons for good/poor performance. We show that the best performing architecture, CryinGAN, outperforms the U-Net models, and is competitive against the graph models despite its lack of invariances and weaker expressive power. This work provides a new framework and insights to guide the development of future generative models, whether for ordered or disordered materials.

Abstract Image

Dismai-Bench:使用无序材料和界面设计生成模型†。
近年来,生成模型在材料科学应用领域,特别是在材料发现的逆向设计领域受到了极大关注。然而,对这些模型的评估通常是基于新生成的、未经验证的材料,使用启发式指标(如电荷中性),对模型性能的评估范围较窄。此外,目前针对无机材料的研究主要集中在小型、周期性晶体(≤20 个原子)上,尽管生成大型、更复杂和无序结构的能力会将生成模型的适用性扩展到更广泛的材料领域。在这项工作中,我们提出了无序材料与界面基准(Dismai-Bench),这是一个生成模型基准,使用无序合金、界面和非晶硅数据集(每个结构 256-264 个原子)。模型在每个数据集上独立训练,并通过训练结构和生成结构之间的直接结构比较进行评估。由于每个训练数据集的材料系统是固定的,因此这种比较才有可能进行。对两个图形扩散模型和两个(基于坐标的)U-Net 扩散模型进行了基准测试。结果发现,由于图形的表现力更强,图形模型明显优于 U-Net 模型。虽然表现力较弱的模型中的噪声可以通过促进对训练分布以外的探索来帮助发现材料,但这些模型在面对更复杂的结构时面临着巨大的挑战。为了进一步证明这种基准测试在生成模型开发过程中的益处,我们考虑了开发基于点云的生成对抗网络(GAN)以生成低能无序界面的案例。我们测试了不同的 GAN 架构,并找出了性能好/差的原因。我们发现,性能最好的架构 CryinGAN 优于 U-Net 模型,尽管它缺乏不变性,表现力也较弱,但与图模型相比仍具有竞争力。这项工作提供了一个新的框架和见解,可用于指导未来生成模型的开发,无论是有序材料还是无序材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
2.80
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