Strategic alloy design and processing for improved mechanical response in the Mo-Si-Ti system

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
R.J. Vikram , Daniel Schliephake , Manoja Namadi , Abhik Choudhury , Alexander Kauffmann , Satyam Suwas , Martin Heilmaier
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引用次数: 0

Abstract

This study focuses on the impact of off-eutectic microstructures on mechanical properties in ternary Mo-Si-Ti alloys, namely Ti-rich Mo-18Si-72Ti and Mo-16.5Si-72Ti, in relation to the well-researched eutectic, two-phase Mo-20Si-52.8Ti alloy. The microstructure of these alloys consists of a Ti-rich body-centered cubic solid solution (Ti,Mo,Si)ss and a hexagonal silicide phase (Ti,Mo)5Si3. Notably, the off-eutectic alloys exhibit remarkable compression ductility at 800 °C, distinguishing it from Mo-20Si-52.8Ti. The directionally solidified (DS) specimens of the Ti-rich alloys display higher strength compared to the arc-melted specimens. This enhanced strength is attributed to the multiple precipitation strengthening events present, despite the increase in the length scale of individual phases which further enhances the fracture toughness.

Abstract Image

战略性合金设计和加工,改善钼-矽-钛体系的机械响应
本研究的重点是偏共晶微观结构对三元钼-矽-钛合金(即富钛钼-18矽-72钛和钼-16.5矽-72钛)机械性能的影响,并将其与经过深入研究的共晶两相钼-20矽-52.8钛合金联系起来。这些合金的微观结构包括富钛体心立方固溶体 (Ti,Mo,Si)ss 和六方硅化物相 (Ti,Mo)5Si3。值得注意的是,非共晶合金在 800 ℃ 时表现出显著的压缩延展性,使其与 Mo-20Si-52.8Ti 不同。与电弧熔化试样相比,富钛合金的定向凝固(DS)试样显示出更高的强度。这种强度的提高归因于多重沉淀强化事件的存在,尽管单个相的长度尺度增加进一步提高了断裂韧性。
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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