Shot noise and tunneling magnetoresistance in silicene-based ferromagnet/antiferromagnet/ferromagnet/p-wave superconductor junctions

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-09-02 DOI:10.1016/j.physe.2024.116094

Yanya Xu , Hongmei Zhang , De Liu

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引用次数: 0

Abstract

We investigate the transport properties in silicene-based ferromagnet/antiferromagnet/ferromagnet/p-wave superconductor junctions within the Blonder–Tinkham–Klapwijk formalism by solving the Dirac–Bogoliubov-de Gennes equation. The results show that the conductance and the shot noise strongly depend on the p-wave superconducting pair potentials and the magnetic configurations of the ferromagnetic regions. The simultaneous diminution of the conductance and enhancement of the shot noise can be achieved with the increase of the antiferromagnetic exchange field strength. The conductance and the shot noise can be effectively modulated by the external electric field and the ferromagnetic exchange field strength, and the corresponding switch effects are also achieved. The tunneling magnetoresistance (TMR) outside the subgap energy interval is always larger than the one obtained in the subgap energy interval. When the antiferromagnetic exchange field strength is large enough, a larger TMR can be obtained by tuning the external electric field.

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硅基铁磁体/反铁磁体/铁磁体/p 波超导体结中的射频噪声和隧道磁阻

我们在布隆德-廷卡姆-克拉普韦克（Blonder-Tinkham-Klapwijk）形式主义下，通过求解狄拉克-波哥留布夫-德-根尼方程，研究了硅基铁磁体/反铁磁体/铁磁体/p 波超导体结的传输特性。结果表明，电导和射出噪声在很大程度上取决于 p 波超导对电势和铁磁区域的磁性配置。随着反铁磁交换场强度的增加，电导和射出噪声会同时减小和增强。外部电场和铁磁交换场强可以有效地调制电导和射出噪声，并实现相应的开关效应。亚隙能量区间外的隧穿磁阻（TMR）总是大于亚隙能量区间内的隧穿磁阻。当反铁磁交换场强足够大时，通过调整外部电场可以获得更大的隧穿磁阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures