Ultra-low loss silicon nitride becomes even cooler.

IF 19.4 1区物理与天体物理 Q1 Physics and Astronomy

Light, science & applications Pub Date : 2024-09-05 DOI:10.1038/s41377-024-01576-1

Dawn T H Tan, Xavier X Chia

引用次数: 0

Abstract

Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.

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超低损耗的氮化硅温度更低。

使用氚化前驱体实现的超低损耗氮化硅和 CMOS 后段制程中的低热预算可能会加速其广泛应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Light, science & applications OPTICS-

CiteScore

27.00

自引率

2.60%

发文量

331

审稿时长

20 weeks

期刊介绍： Light: Science & Applications is an open-access, fully peer-reviewed publication.It publishes high-quality optics and photonics research globally, covering fundamental research and important issues in engineering and applied sciences related to optics and photonics.