Anisotropic magnetoresistance in altermagnetic MnTe

Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner
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Abstract

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. Altermagnetism is manifested as a three-fold component in the transverse magnetoresistance which arises due to the anomalous Hall effect.

Abstract Image

改磁锰钛中的各向异性磁阻
最近,锰碲被确定为一种反磁性材料,它具有自旋极化电子带以及反常传输效应(如反常霍尔效应)。除了这些由变磁性产生的效应外,锰碲还承载其他磁阻效应。在此,我们研究了外加磁场对磁序的操控及其对电阻率的影响。特别是,我们确定了当磁序在六边形基面内旋转时,各向异性磁阻的哪些成分会出现。我们的实验结果与磁传输分量的对称性分析一致,表明各向异性磁阻的存在与电流和磁序的相对方向以及晶体和磁序有关。反向磁性表现为横向磁阻的三倍分量,这是由反常霍尔效应引起的。
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