Surface morphology of 3C–SiC layers grown on 4H–SiC substrates using TCS as silicon precursor

IF 2.1 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2024-08-03 DOI:10.1016/j.ssc.2024.115650

Xun Li, Maimai Mu

引用次数: 0

Abstract

The hetero-epitaxial growth of 3C–SiC layers on on-axis 4H–SiC substrates has been demonstrated in a hot-wall CVD reactor using trichlorosilane and ethylene as precursors. The additional chlorine is supplied by hydrogen chloride for variation of Cl/Si ratio. The influence of temperature, C/Si ratio and Cl/Si ratio process parameters on the morphology is studied. Double-position-boundaries free 3C–SiC epitaxial layers have been successfully grown at the optimized condition, which is at a temperature of 1340 °C, with C/Si = 0.6 and Cl/Si = 6 using a carbon-rich pretreatment. Low temperature near bandgap photoluminescence shows a good optical property of the obtained 3C–SiC epitaxial layers. Compared to the standard chemistry, a higher growth rate of 12 μm/h could be achieved by utilizing the chlorinated precursors. This study provides a feasible way to grow double-position-boundaries free 3C–SiC epitaxial layers using TCS as silicon precursor.

查看原文本刊更多论文

以三氯氢硅为硅前驱体在 4H-SiC 基底上生长的 3C-SiC 层的表面形貌

在热壁 CVD 反应器中，以三氯硅烷和乙烯为前驱体，在同轴 4H-SiC 基底上实现了 3C-SiC 层的异外延生长。额外的氯由氯化氢提供，以改变 Cl/Si 的比例。研究了温度、C/Si 比和 Cl/Si 比工艺参数对形貌的影响。在最佳条件下，即温度为 1340 ℃、C/Si = 0.6 和 Cl/Si = 6 时，使用富碳预处理，成功地生长出了无双位边界的 3C-SiC 外延层。低温近带隙光致发光表明所获得的 3C-SiC 外延层具有良好的光学特性。与标准化学方法相比，利用氯化前驱体可实现 12 μm/h 的较高生长速率。这项研究为使用 TCS 作为硅前驱体生长无双位界 3C-SiC 外延层提供了一种可行的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.