The nontrivial effects of annealing on superconducting properties of Nb single crystals

Amlan Datta, Kamal R Joshi, Giulia Berti, Sunil Ghimire, Aidan Goerdt, Makariy A Tanatar, Deborah L Schlagel, Matthew F Besser, Dapeng Jing, Matthew J Kramer, Maria Iavarone and Ruslan Prozorov
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Abstract

The effect of annealing on the superconducting properties of niobium single crystals was studied using optical, magnetic, and scanning tunneling microscopy (STM) methods. Pieces of the same crystal boule were studied before and after the annealing at 800 , 1400 , and near the melting point of niobium (2477 ). The initial samples had a high hydrogen content and low-temperature imaging revealed large hydrides (hundreds of micrometers) appearing below 190 K. The formation of these large precipitates is already completely suppressed by annealing at 800 . However, the overall superconducting properties of the annealed samples did not improve and, in fact, worsened. In particular, the superconducting transition temperature decreased, the upper critical field increased, and the pinning strength increased. In the STM study, the sample was annealed initially at 400 , measured, annealed at 1700 , and measured again. The STM revealed a ‘dirty’ superconducting gap with a significant spatial variation in tunneling conductance after annealing at 400 . The clean gap was recovered after annealing at 1700 . This is likely due to oxygen redistribution near the surface, which is always covered by oxide layers in as-grown crystals. Our results indicate that vacuum annealing at least up to 1400 , while removing a large percentage of hydrogen, introduces additional nanosized defects, likely hydride precipitates, that act as efficient pair-breaking and pinning centers. The dimensionless scattering rate is estimated to have increased from to about after annealing at 1400 . These results on single crystals differ drastically from those obtained in polycrystalline bulk niobium (i.e. cut from superconducting radio-frequency cavities), where annealing is known to have a significant positive effect that is attributed to the improvement of the crystalline structure masking the more subtle influence of the hydrides.
退火对铌单晶超导特性的非凡影响
利用光学、磁学和扫描隧道显微镜(STM)方法研究了退火对铌单晶体超导特性的影响。在 800、1400 和接近铌的熔点 (2477 ) 的退火前后,研究了相同晶体束的碎片。初始样品的氢含量很高,低温成像显示在 190 K 以下出现了大块氢化物(数百微米)。然而,退火样品的整体超导特性并没有得到改善,事实上反而有所恶化。特别是,超导转变温度降低了,上临界电场增加了,针刺强度增加了。在 STM 研究中,样品最初在 400℃退火,测量后在 1700℃退火,然后再次测量。STM 显示出一个 "脏的 "超导间隙,在 400 退火后,隧道电导有明显的空间变化。在 1700 退火后,干净的间隙又恢复了。这可能是由于表面附近的氧重新分布造成的,而在晶体生长过程中,表面总是被氧化层覆盖。我们的研究结果表明,真空退火至少到 1400 时,在去除大量氢的同时,还引入了额外的纳米级缺陷,很可能是氢化物沉淀,这些缺陷可作为有效的配对断裂和引脚中心。据估计,在 1400℃退火后,无量纲散射率将增加到约 。单晶的这些结果与多晶块状铌(即从超导射频空腔中切割出来的)的结果大相径庭,众所周知,退火会产生显著的积极影响,这归因于晶体结构的改善掩盖了氢化物更微妙的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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