Enhanced Thermal Management in Microelectronics Packaging With 2D h‐BN Nanocomposite Underfills

Nano Select Pub Date : 2024-08-08 DOI:10.1002/nano.202400073
S. A. Razgaleh, Shyam Aravamudhan
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Abstract

The quest for faster and more densely packed microelectronic circuits has necessitated significant advancements in thermal management and encapsulant manufacturing technologies. This pursuit has driven the development of innovative methods to enhance heat flux and thermal transfer in microelectronics packaging. A critical issue is the thermal stress induced by the coefficient of thermal expansion (CTE) mismatch between the chip and the substrate, threatening the chip's mechanical integrity and lifespan. To address this challenge, there is a growing emphasis on using underfills to improve thermal transfer and heat dissipation. The current study focuses on using hexagonal boron nitride (h‐BN) nanofillers for robust thermal support in microelectronics packaging. This study deploys epoxy adhesives to integrate nanofillers, where precise dispersion is crucial for optimizing thermal and mechanical properties. Findings show 1500‐ and 500‐nm h‐BN enhance axial thermal conductivity and diffusivity linearly with filler content, while the 70‐nm h‐BN plateaus at 3% volume. The 70‐nm h‐BN demonstrates superior radial thermal performance.
利用二维 h-BN 纳米复合材料底部填充增强微电子封装中的热管理
为了追求更快、更密集的微电子电路,有必要在热管理和封装制造技术方面取得重大进展。这种追求推动了创新方法的发展,以增强微电子封装中的热通量和热传导。一个关键问题是芯片和基板之间的热膨胀系数(CTE)不匹配所引起的热应力,它威胁着芯片的机械完整性和使用寿命。为了应对这一挑战,人们越来越重视使用底部填充物来改善热传导和散热。目前的研究重点是使用六方氮化硼(h-BN)纳米填料为微电子封装提供强大的热支持。这项研究采用环氧树脂粘合剂来集成纳米填料,精确的分散对于优化热性能和机械性能至关重要。研究结果表明,1500 纳米和 500 纳米 h-BN 的轴向热导率和扩散率随填料含量的增加而线性增加,而 70 纳米 h-BN 在 3% 的体积下会趋于稳定。70 纳米 h-BN 具有优异的径向热性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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