TXRF capability of metallic contamination analysis on rough silicon wafers

IF 2.7 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Materials Research Pub Date : 2024-08-02 DOI:10.1557/s43578-024-01401-w

Viviane Yim, Anna Mukhtarov, Nathalie Drogue, Delphine Autillo, Thierry Lardin, Marc Zussy, Jérôme Dechamp, Delphine Truffier-Boutry

{"title":"TXRF capability of metallic contamination analysis on rough silicon wafers","authors":"Viviane Yim, Anna Mukhtarov, Nathalie Drogue, Delphine Autillo, Thierry Lardin, Marc Zussy, Jérôme Dechamp, Delphine Truffier-Boutry","doi":"10.1557/s43578-024-01401-w","DOIUrl":null,"url":null,"abstract":"Total X-Ray Fluorescence (TXRF) is a non-destructive technique for the characterization of metallic contaminants on bare silicon wafers. TXRF is sensible to roughness leading to a diffraction phenomenon. In this study, the effects of roughness on TXRF analysis were evaluated with various rough silicon wafers produced by microelectronic processes of grinding, wet cleaning and chemical mechanical polishing. TXRF parameters rise as roughness increases, starting from 3 nm RMS (Root Mean Square) roughness. On spectra, characteristic Si (silicon wafer) and W (TXRF anode) peaks widen. Secondary peaks, sum/escape peaks appear, inducing interferences with Al, Cu, Zn and background noise increases as well. Through intentionally contaminated grinded wafers (RMS 12 nm) by spin-coating at selected concentrations, it was observed that most of the elements are quantified at 1 × 1012 at/cm2. At concentrations of 1 × 1010 at/cm2 and 1 × 1011 at/cm2, only few elements are quantified due to the elevated background noise and interferences.<h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\n","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"2018 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43578-024-01401-w","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

Total X-Ray Fluorescence (TXRF) is a non-destructive technique for the characterization of metallic contaminants on bare silicon wafers. TXRF is sensible to roughness leading to a diffraction phenomenon. In this study, the effects of roughness on TXRF analysis were evaluated with various rough silicon wafers produced by microelectronic processes of grinding, wet cleaning and chemical mechanical polishing. TXRF parameters rise as roughness increases, starting from 3 nm RMS (Root Mean Square) roughness. On spectra, characteristic Si (silicon wafer) and W (TXRF anode) peaks widen. Secondary peaks, sum/escape peaks appear, inducing interferences with Al, Cu, Zn and background noise increases as well. Through intentionally contaminated grinded wafers (RMS 12 nm) by spin-coating at selected concentrations, it was observed that most of the elements are quantified at 1 × 10¹² at/cm². At concentrations of 1 × 10¹⁰ at/cm² and 1 × 10¹¹ at/cm², only few elements are quantified due to the elevated background noise and interferences.

Graphical abstract

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对粗糙硅晶片进行金属污染分析的 TXRF 能力

全 X 射线荧光 (TXRF) 是一种非破坏性技术，用于表征裸硅晶片上的金属污染物。TXRF 易受粗糙度的影响而产生衍射现象。本研究评估了粗糙度对 TXRF 分析的影响，使用的是通过研磨、湿法清洁和化学机械抛光等微电子工艺制作的各种粗糙硅晶片。从 3 nm RMS（均方根）粗糙度开始，TXRF 参数随着粗糙度的增加而上升。在光谱上，特征 Si（硅晶片）和 W（TXRF 阳极）峰变宽。次峰、总和/消失峰出现，导致铝、铜、锌干扰和背景噪声增加。在选定的浓度下，通过旋涂有意污染的研磨晶片（均方根值为 12 nm），观察到大多数元素在 1 × 1012 at/cm2 的浓度下可以定量。在浓度为 1 × 1010 at/cm2 和 1 × 1011 at/cm2 时，由于本底噪声和干扰的升高，只能对少数元素进行定量。

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来源期刊

Journal of Materials Research 工程技术-材料科学：综合

CiteScore

4.50

自引率

3.70%

发文量

362

审稿时长

2.8 months

期刊介绍： Journal of Materials Research (JMR) publishes the latest advances about the creation of new materials and materials with novel functionalities, fundamental understanding of processes that control the response of materials, and development of materials with significant performance improvements relative to state of the art materials. JMR welcomes papers that highlight novel processing techniques, the application and development of new analytical tools, and interpretation of fundamental materials science to achieve enhanced materials properties and uses. Materials research papers in the following topical areas are welcome. • Novel materials discovery • Electronic, photonic and magnetic materials • Energy Conversion and storage materials • New thermal and structural materials • Soft materials • Biomaterials and related topics • Nanoscale science and technology • Advances in materials characterization methods and techniques • Computational materials science, modeling and theory