Elaboration, Structural and Optical Characterization of the New Ternary Chalcogenide SnSb2S5

Abstract

In this study, -antimony sulfide (SnSb2S5) thin films with 200 nm, 312 nm, and 431 nm thicknesses were successfully fabricated using thermal evaporation. These films' structural, optical, and photoanode properties were meticulously characterized to assess their suitability for photovoltaic applications. X-ray diffraction (XRD) analysis confirmed the presence of an orthorhombic symmetry phase within the Pnma space group, ensuring the crystalline quality of the films. Raman spectroscopy further validated the crystal structure and provided detailed identification of the vibrational active modes specific to this pseudo-binary chalcogenide compound. Optical characterization revealed that the SnSb2S5 thin films possess direct optical bandgap energies ranging from 1.91 to 1.99 eV, making them ideal for efficient light absorption in photovoltaic devices. The refractive index (n) displayed minimal variation within the absorption region, indicating stable optical properties. At the same time, it increased proportionally with film thickness outside the absorption region, suggesting enhanced optical behavior with thicker films. This characteristic is particularly advantageous for improving the efficiency of photoanode materials. The combination of favorable structural properties, optimal bandgap energies, and tunable optical responses positions SnSb2S5 thin films as promising candidates for advanced photovoltaic and optoelectronic applications. These findings highlight the potential of SnSb2S5 in developing high-performance photoanodes, contributing to the advancement of solar energy conversion technologies.