Antiferromagnetic domain wall memory with neuromorphic functionality

J. Godinho, P. K. Rout, R. Salikhov, O. Hellwig, Z. Šobáň, R. M. Otxoa, K. Olejník, T. Jungwirth, J. Wunderlich
{"title":"Antiferromagnetic domain wall memory with neuromorphic functionality","authors":"J. Godinho, P. K. Rout, R. Salikhov, O. Hellwig, Z. Šobáň, R. M. Otxoa, K. Olejník, T. Jungwirth, J. Wunderlich","doi":"10.1038/s44306-024-00027-2","DOIUrl":null,"url":null,"abstract":"Antiferromagnetic materials have unique properties due to their alternating spin arrangements. Their compensated magnetic order, robust against external magnetic fields, prevents long-distance crosstalk from stray fields. Furthermore, antiferromagnets with combined parity and time-reversal symmetry enable electrical control and detection of ultrafast exchange-field enhanced spin manipulation up to THz frequencies. Here we report the experimental realization of a nonvolatile antiferromagnetic memory mimicking an artificial synapse, in which the reconfigurable synaptic weight is encoded in the ratio between reversed antiferromagnetic domains. The non-volatile memory is “written” by spin-orbit torque-driven antiferromagnetic domain wall motion and “read” by nonlinear magnetotransport. We show that the absence of long-range interacting stray magnetic fields leads to very reproducible electrical pulse-driven variations of the synaptic weights.","PeriodicalId":501713,"journal":{"name":"npj Spintronics","volume":" ","pages":"1-8"},"PeriodicalIF":0.0000,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s44306-024-00027-2.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Spintronics","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44306-024-00027-2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Antiferromagnetic materials have unique properties due to their alternating spin arrangements. Their compensated magnetic order, robust against external magnetic fields, prevents long-distance crosstalk from stray fields. Furthermore, antiferromagnets with combined parity and time-reversal symmetry enable electrical control and detection of ultrafast exchange-field enhanced spin manipulation up to THz frequencies. Here we report the experimental realization of a nonvolatile antiferromagnetic memory mimicking an artificial synapse, in which the reconfigurable synaptic weight is encoded in the ratio between reversed antiferromagnetic domains. The non-volatile memory is “written” by spin-orbit torque-driven antiferromagnetic domain wall motion and “read” by nonlinear magnetotransport. We show that the absence of long-range interacting stray magnetic fields leads to very reproducible electrical pulse-driven variations of the synaptic weights.

Abstract Image

具有神经形态功能的反铁磁畴壁存储器
反铁磁材料因其交替的自旋排列而具有独特的性能。它们的补偿磁序对外部磁场有很强的抵抗力,可以防止杂散磁场的长距离串扰。此外,结合了奇偶性和时间反转对称性的反铁磁体还能在太赫兹频率下实现超快交换场增强自旋操纵的电控制和检测。在这里,我们报告了模仿人工突触的非易失性反铁磁存储器的实验实现情况,其中可重新配置的突触权重通过反向反铁磁畴之间的比率进行编码。这种非易失性存储器通过自旋轨道力矩驱动的反铁磁畴壁运动进行 "写入",并通过非线性磁传输进行 "读取"。我们的研究表明,由于不存在长程相互作用的杂散磁场,电脉冲驱动的突触权重变化具有很强的可重复性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信