An Analytic Model for the 2-DEG Density Current-Voltage Characteristic for AlGaN/GaN HEMTs

Abstract

Higher frequency hetero-junction transistors called High Electron Mobility Transistors (HEMTs) are employed in a number of high-power applications, including radiofrequency, radiation, space exploration, and others. When stressed between the junction of a broad bandgap and low bandgap material, AlGaN/GaN HEMTs create Two-Dimensional Electron Gas (2DEG).To determine the eventual number of electrons in the quantum well, it is necessary to assess the charge density generated by the polarization existing in the 2DEG region. In this paper, two-dimensional electron gas (2-DEG) sheet carrier concentration estimate model takes into consideration the substantially dominating total polarization. In order to regulate the impact of these characteristics on the device performance, discussion has focused on the current-voltage characteristic, which illustrates how the drain-source current varies in response to the gate voltage modulation. Our study also aims at how the two-dimensional electron gas density depends on the aluminum molar percentage and AlGaN layer thickness.