A Brief Review of Electronic and Magnetic Structure of TIF3

Q4 Engineering
Gayanath W. Fernando, Donal Sheets, Jason Hancock, Arthur Ernst, R. Matthias Geilhufe
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引用次数: 0

Abstract

Materials with perovskite structure are known to exhibit fascinating physical properties such as high-temperature superconductivity, negative thermal expansion (NTE) and colossal magnetoresistance. However, transition metal trifluoride perovskites are less well studied compared to their oxide counterparts though they display marked differences such as NTE behavior in ScF3. Doping of such MF3 perovskites has been the focus of the experimental work of Morelock et al. [1] which provides a comprehensive structural study of the material class Sc1[Formula: see text]Ti[Formula: see text]F3. As shown in Fig. 1, there is a structural phase transition assumed to be tied to tilting of corner sharing octahedrons in this class of crystal structures which is believed to have an electrostatic dipolar origin, seen for example even in AlF3 [2]. However, the insulating and magnetic properties of TiF3 are closely related to the transition metal 3d-electrons. The extra valence [Formula: see text]-electron that Ti carries compared to Sc [1, 3] gives rise to unusual electronic and magnetic properties.
TIF3 的电子和磁性结构简述
众所周知,具有包晶结构的材料具有迷人的物理特性,如高温超导性、负热膨胀(NTE)和巨大的磁阻。然而,与对应的氧化物相比,对三氟化过渡金属包晶石的研究较少,尽管它们显示出明显的差异,如 ScF3 中的负热膨胀行为。Morelock 等人[1] 的实验工作重点是掺杂此类 MF3 包晶,他们对 Sc1[式:见正文]Ti[式:见正文]F3 这类材料进行了全面的结构研究。如图 1 所示,在这一类晶体结构中,存在着一种假定与角共享八面体倾斜有关的结构相变,这种相变被认为是由静电偶极引起的,甚至在 AlF3 [2] 中也能看到这种相变。然而,TiF3 的绝缘性和磁性与过渡金属 3d 电子密切相关。与 Sc 相比,Ti 所携带的额外价电子[式:见正文][1, 3]产生了不同寻常的电子和磁性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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