High precision current mirror circuit based on two-dimensional material transistors

Abstract

We first report a 2D material-based P-FET with excellent output current saturation characteristics and demonstrate the highest small-signal output impedance characteristics among all previously published 2D-FETs. Further, we utilize the excellent performance of the device to demonstrate a current mirror circuit, which has better high precision current replication performance than silicon-based devices. This work provides a possible technical approach for the development of high-performance analog circuit devices based on 2D materials.